本實驗使用固態粉末合成法將鋅粉與氧化鋅粉依不同重量百分比(5%~20%)合成以AC交流電加熱製成樣品，利用光激發螢光光譜(photoluminescence, PL)、掃描式電子顯微鏡(scanning electron microscopy, SEM)與X光繞射儀(X-Ray diffraction, XRD)，發現鋅含量對於樣品影響甚大，而15%之樣品在本實驗為最佳成長條件。
此外，由Arrhenius relationship 可得D0X之localization energy約10至16 meV；FX的binding energy約57至61 meV，另外從 Varshni’s　formula擬合FX 可得EFX(0)約3.374-3.377 eV，非常接近於良好的氧化鋅晶體。

In this study, the flexible ZnO thin films were first fabricated by AC heater with the mixtures of Zn and ZnO powders at different weight ratio (WR) ranging from 5% to 20%.The optical properties were characterized by photoluminescence (PL) spectra. The surface morphologies were performed by scanning electron microscope (SEM).The cystallographic characteristics were performed by X-Ray diffraction (XRD). Single ZnO XRD peak and smooth SEM surface were observed for the film grown at WR is 15%. However, the XRD results showed that the preferred growth direction of the samples is (101) direction in this growth mode. From the analysis of PL spectra, we could obtain localization energy of donor bound to exciton (D0X) and binding energy of free exciton (FX) is about 10~16 meV and 57 ~ 61 meV respectively. In addition, the FX transition energies were about 3.374 to 3.377 eV which indicates the structures of these thin films are almost perfect ZnO crystal.

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