本論文主要為上陰極發光有機發光元件的製作，上陰極電極之設計方式採用半透明金屬薄膜，再加上ZnS/Ag/ZnS三層結構，因為全部材料都可採用熱蒸鍍的方式鍍膜，這樣的設計能避免製作氧化物透明導電膜的時候，電漿傷害底下有機層的問題，且讓光能順利的耦合至外部。因為Ag的功函數與有機層HOMO能階之間的能障較大，我們在電洞注入層中加入P-型摻雜層F4-TCNQ，有效增加電洞注入能力。當上陰極結構為Al/ZnS/Ag/ZnS，各厚度為17/37/8/37nm時，元件結構為
Ag/CuPc:F4-TCNQ/NPB/Alq3/BCP/LiF/Al/ZnS/Ag/ZnS，元件在13V時，元件最大亮度為20000 cd/m2，元件的電流功率為2.6 cd/A。此外，我們更進一步將Al厚度降低至7 nm，上陰極結構一樣為Al/ZnS/Ag/ZnS，當各層厚度為7/37/15/37nm時，元件在15V時，元件最大亮度為31000 cd/m2，元件的電流功率為5.6 cd/A，因為Ag 厚度15 nm所構成的薄膜可提供較佳的光學性質與電性，同時也可以有效提供陰極的電性，使電子注入量增加而使其元件發光效率提升。在反射陽極Ag的表面上，利用熱蒸鍍氧化鎳薄膜可以有效改善Ag表面的功函數，因為氧化鎳薄膜的功函數高達 5.0 e.V，有效降低與有機層間的能障，增加電洞注入，元件起始電壓也降到3 V左右。

This subject focused on the fabrication of top-cathode emission organic light emitting diodes. To make use of the semi-transparent metal is our design for the top-cathode and utilize ZnS/Ag/ZnS multilayer structure as top-capping layer. All organic layers and electrodes can fabricate by thermal evaporation. The energy barrier between the work function of Ag anode and the HOMO of the organic material was high, so we doped F4-TCNQ into the hole-injection layer(CuPc) to enhance the amount of hole injection.
Ag/CuPc:F4-TCNQ/NPB/Alq3/BCP/LiF/Al/ZnS/Ag/ZnS was device structure, the maximum brightness of 20000cd/m2 was obtained at 13V, maximum current efficiency was 2.6 cd/A with the cathode thickness was 17/37/8/37 nm individually. We tried to lower the Al thickness from 17nm to 7nm, the cathode with a structure of Al/ZnS/Ag/ZnS and 7/37/15/37 nm respectively was fabricated. The device structure was the same with above, maximum brightness of 31000cd/m2 was obtained at 15V, maximum current efficiency was 5.6 cd/A. When Ag thickness was adjusted to 15 nm can increase the amount of electron injection effectively and at the same time, the efficiency of device was raised because of the device had much amount of electron.
We modified the surface work function of reflective anode Ag with NiO by thermal evaporation. NiO was a high work function material. The work function of NiO was 5.0 e.V, it can lower the barrier between the anode and organic layer to increase the amount of hole injection. The turn-on voltage of the device reduced to 3 V.

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