本研究以單一反應系統(one-pot system)在230-270°C 反應10到24小時合成銻摻雜之Sn1-xSbxSe奈米晶(0 ≤ x ≤ 0.4)，並探討銻的摻雜對於相的生成、形貌改變及能隙的變化影響。隨著銻摻雜量(x)的上升，合成不含其他雜質的單一SnSe相，其所需要的溫度以及時間都需要增加。Sn1-xSbxSe奈米晶之摻雜量介於0 ≤ x ≤ 0.2及0.3 ≤ x ≤ 0.4分別形成SnSe(1)及SnSe(2)兩種不同的相。SnSe(1)到SnSe(2)相變的原因可以歸因於越多的銻摻雜則引入越多的錫空位缺陷進入Sn1-xSbxSe晶體中。未摻雜的SnSe形貌為奈米板狀結晶，銻的摻雜促進Sn1-xSbxSe奈米柱的成長，且數量隨銻的摻雜量而上升。Sn1-xSbxSe奈米晶的能隙隨銻濃度x=0增加到0.4，間接能隙從0.92 eV增加到1.37 eV，直接能隙從1.37 eV增加至1.54 eV。此研究結果顯示，Sn1-xSbxSe奈米晶的形貌和能隙可以藉由銻的摻雜量來控制，而使得其具有成為太陽能材料的潛力。

The effects of Sb dopant on the phase formation, morphology, and bandgap of Sn1-xSbxSe nanocrystals with 0 ≤ x ≤ 0.4 synthesized at 230-270°C for 10-24 h in a one-pot system were studied. The synthesis temperature and time required to form single SnSe phase without the impurities in the Sn1-xSbxSe nanocrystals increased with the amount (x) of Sb dopant. Two different phases, SnSe(1) and SnSe(2), occurred in the Sn1-xSbxSe nanocrystals with 0 ≤ x ≤ 0.2 and 0.3 ≤ x ≤ 0.4, respectively. The phase transformation from SnSe(1) to SnSe(2) can be attributed to the introduction of more Sb dopant and thus more Se vacancies into the Sn1-xSbxSe lattice. The undoped SnSe nanocrystals grew as the morphology of nanosheets, while the introduction of Sb enhanced the growth of Sn1-xSbxSe nanorods with the extent increasing with the amount of Sb dopant. The indirect bandgap of Sn1-xSbxSe nanocrystals could be tuned from 0.92 to 1.37 eV by increasing the Sb concentration (x) from 0 to 0.4, direct bandgap can also be tuned from 1.37 to 1.54 eV. This study reveals that the morphology and bandgap of Sn1-xSbxSe nanocrystals can be tuned by adjusting the amount of Sb dopant, making the Sn1-xSbxSe nanocrystals potential candidates as the photovoltaic materials.

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