有機半導體材料為近十年來備受研究與注意的新興材料，概因其製程設備便宜、低製程溫度、以及可撓曲等特性。有機元件中，更多的研究專注於提升有機場效電晶體的載子移動率與探討載子傳輸的機制。隨著電晶體微小化的趨勢，元件之間的串音(cross-talk)導致的漏電流日益嚴重，若能使電晶體元件具載子移動率異相性，將可解決此問題，有助於製作更微小的電子元件。起始電壓(threshold voltage, Vt)為電晶體中重要的參數之一，精確的控制電晶體之起始界壓對可靠的電路操作而言是不可或缺的。論文中利用有機半導體材料中常被研究與使用的小分子材料-五環素(pentacene)與高分子材料-聚(3-己烷基噻吩)(P3HT)做為有機半導體層。
利用具感光特性的聚亞醯胺(photosensitive polyimide, PSPI)來改善與修飾五環素與二氧化矽之間(有機-無機)的介面。聚亞醯胺層有效改善並提升有機場效電晶體元件的電特性。聚亞醯胺經極化紫外光照射，其表面分子因對紫外光吸收能力不同將使分子鏈產生不同的斷鍵情形。五環素成長在經極化紫外光曝照的聚亞醯胺表面，因聚亞醯胺薄膜表面異相性使五環素薄膜產生配向效果。電晶體元件載子移動率產生異相性。不同紫外光能量對於聚亞醯胺產生之斷鍵數量不同，影響聚亞醯胺表面所殘留之電子電荷數量，使電晶體元件之載子移動率產生不同影響。本論文所使用之感光性聚亞醯胺在曝照能量為20焦耳時將產生最大載子移動率與異相性比。
感光式配向所產生電特性的異相性有限，本論文中引入接觸轉印與遮罩植入式顯影(contact-transferrd and mask-embedded lithography, CMEL)製作出深80 nm、寬400、600、800和1200 nm的聚亞醯胺奈米溝槽來配向五環素半導體層。此方法不僅同樣具有改善五環素與二氧化矽間介面的功能，更可提高電晶體元件載子遷移率的異相性(比值高達220)。概因奈米溝槽提供載子在兩方向上有不同的行進方式。載子在電晶體源極與汲極間傳遞時，若奈米結構的走向垂直於源極與汲極間的電場，則載子需跨越奈米溝槽結構。當載子在奈米結構的邊緣傳遞(由槽底往上移動)時，由於傳遞方向垂直電場，不利於載子的運動。若奈米結構平行電場方向，則載子的運動不受結構的影響。載子遷移率的高異相性比可以應用在積體電路上，用來阻絕相鄰元件間的漏電流，而不需要在相鄰元件間額外製作阻擋層來阻止漏電流的傳遞。
聚亞醯胺奈米溝槽不僅具提高載子移動率異相性的能力，更可應用於控制五環素晶相的轉變。五環素成長於二氧化矽基板或是聚亞醯胺薄膜上，其主要晶相為薄膜相(thin-film phase)。利用不同線寬的奈米溝槽可使五環素晶相產生變化。五環素磊晶於線寬越窄的溝槽結構，主要晶相將轉變成塊材相(bulk phase)。隨著溝槽線寬變寬，薄膜相對塊材相的X-ray繞射訊號強度比值將隨之變大。在溝槽線寬為400 nm的結構上磊晶的五環素薄膜，更發現了一個新的五環素晶相，其c軸晶格距離為1.35 nm。借由化學量子模擬計算，發現此新晶相較目前已知最穩定的五環素晶相(c軸晶格距離為1.41 nm)更穩定。五環素晶相轉變主因乃溝槽結構提供一外在擾動，如同在成長五環素薄膜時，成長於高溫基板或以溶劑處理五環素薄膜表面，使五環素分子磊晶時將往更穩定的晶相結構(塊材相)轉變。
論文最後利用氧電漿處理控制聚(3-己烷基噻吩)場效電晶體之起始電壓。利用水溶性聚胺酯 (polyurethane, PU)，以旋轉塗佈法當作介電層並利用氧電漿做表面處理，量測在不同氧電漿能量轟擊下表面能之變化。介電層表面能與元件起始電壓具有特定之關係，隨著表面能增大，起始電壓往0 V偏移。聚胺酯表面經氧電漿轟擊後，表面所帶有之電子數量將減少，而降低累積通道產生所需的電壓值而達到控制起始電壓的目的。

Organic field-effect transistors (OFETs) have attracted a lot of interest for practical applications such as flexible flat-panel displays, logic devices, and radio frequency identification tags. The interface between organic semiconductors and the insulator greatly influences the performance of organic devices. Reducing the processes and improving the interface are thus desirable goals.
The work presented in this dissertation is divided into two parts according to the type of organic material. Part one deals with a small-molecule material, pentacene, and part two deals with conjugated organic polymers, poly(3-hexythiophene). In part one, we used photosensitive polyimide (PI) to improve the interface between pentacene film and SiO2. PI efficiently improves the performance of OFETs; however, exposure to polarized UV light does not provide a high anisotropic ratio of electrical mobility. Furthermore, we used a PI nanostructure to replace the flat PI layer. A built-in autopattern organic semiconductor function on a nanoscale resolution is used because it yields a high anisotropic ratio of mobility (above 220). The nanostructure also affects the polymorphism in pentacene film. The polymorph of pentacene film changed gradually from the thin-film phase to the bulk phase with decreasing width of the nanogratings; the bulk phase and the thin-film phase were both observed in the early stage of growth, which differs from previous studies. Additionally, a new polymorph, whose d-spacing is 1.35 nm, was observed in pentacene thin films deposited on the PI nanostructure.
In part two, we used a polymer material as the semiconductor and water-based polyurethane as the dielectric layer. We exposed polyurethane to various O2 plasma flow energy levels. This method can be used to control the threshold voltage of OFETs in the range of -20 to 0 V.

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