有機電致發光元件在許多方面有極佳的優勢，但是目前OLED尚有許多問題待研究改善，理論的模擬將有助於實驗的發展。
本文分三種模型討論，以程式模擬比較有機電致發光元件在不同的單載子元件結構，其電流密度與電壓之電性曲線。所討論之三種模型分別為SCLC加上考慮場相依的載子移動率模型、考慮缺陷指數分佈存在之TCLC（trap-charge limited conduction）理論模型與考慮電場影響之Poole-Frenkel效應且缺陷的存在理論的FDTO（field dependent trap occupancy）模型，其中依其缺陷分佈的假設還細分為單能階缺陷與指數分佈缺陷。
以此三種模型來模擬分析各種單載子電洞元件（hole-only device）及單載子電子元件（electron-only device），我們所討論的有機層有PPV、MEH-PPV與Alq3等不同材料，在不同的厚度、溫度等參數下，比較其他文獻所實驗出以及用其他模型所模擬出的數據。有機材料配合不同的電極有不同的電性曲線，藉由本文探討其元件結構之模型模擬的適用性及J(V)曲線之變化。我們以程式所建立之模型成功地模擬出單載子元件。

OLED is excellent in several ways. However, there are still many problems to be improved. The calculations of a model and the development of experiments will complement each other.
In this study, three models are used to calculate the J(V) characteristics for several different devices. In the first model that we use is a model of the space-charge limited conduction (SCLC) with field-dependent carrier mobility. In the second model, an exponential distribution of traps is assumed to be a theory of trap-charge limited conduction (TCLC). The third model is the field dependent trap occupancy (FDTO) model taking into account the Poole-Frenkel affect and the change in the occupancy of the traps due to the high electrical fields present in the materials. There are two parts we studied in the FDTO model, single energy level traps and exponentially distributed traps.
The current-voltage characteristics of several hole-only devices and electron-only devices are calculated with the models. The organic layer of the devices are PPV and MEH-PPV and Alq3. As the change of the parameters in the model, such as the thickness and temperature, we compare the calculations of the different methods and the experimental results of different groups with the models that we used. Our programs of models successfully describes the J(V) characteristics of the single carrier devices.

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