| 研究生: |
張惇 Chang, Tun |
|---|---|
| 論文名稱: |
以第一原理及蒙地卡羅模擬法研究一般鐵電材料與弛滯體之電域成長和介電性質 Domain growth and Dielectric properties of Normal Ferroelectrics and Relaxors : A combined Ab initio and Monte Carlo Simulation Method |
| 指導教授: |
許文東
Hsu, Wen-Dung |
| 學位類別: |
碩士 Master |
| 系所名稱: |
工學院 - 材料科學及工程學系 Department of Materials Science and Engineering |
| 論文出版年: | 2013 |
| 畢業學年度: | 101 |
| 語文別: | 中文 |
| 論文頁數: | 101 |
| 中文關鍵詞: | 蒙地卡羅模擬法 、奈米極化區域 、弛滯體 、電域形貌 、介電性質 |
| 外文關鍵詞: | Monte Carlo simulation, polar nano regions(PNRs), random-field, relaxors, domain morphology, dielectric properties |
| 相關次數: | 點閱:111 下載:1 |
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Random-field和奈米極化區域(polar nano regions)的產生一直被認為是影響弛滯體各項性質的關鍵,然而其成因和機制至今仍未有定論。為探究一般鐵電材料和弛滯體中,random-field的有無對於其電域形貌及介電性質之影響,本研究分別採用第一原理及蒙地卡羅法兩種方法進行探討,利用第一原理及Nudged Elastic Band理論計算Pb0.5Zr0.5TiO3及Sr0.5Ba0.5Nb2O6之電域壁能障,然而由於NEB計算中,原子之實際擴散路徑並非本研究採用之直線路徑,因此其結果並未被採用。蒙地卡羅法模擬則利用Ising Model探討一般鐵電材料和弛滯體在不同電場條件下之電域形貌和介電性質,並探討電域形貌和介電性質之關聯性;材料的介電常數和該材料容不容易極化成正相關,越容易極化的材料其介電常數越高;對於鐵電材料或弛滯體等材料其電極化量主要的貢獻為晶格極化,因此在交流電場下,於每一電場週期內,晶格偶極反轉的個數越多,則介電常數會越大。模擬結果顯示偶極反轉的數量在溫度較高、電場較強或較低頻率狀態下較多,因此在這些條件下其介電常數也較高。由於弛滯體中的random-field效應,使其在低溫下便具有許多可反轉的偶極,因此其介電常數較一般鐵電材料高,介電常數實部峰值溫度Tm也較一般鐵電材料低。
The random-field and the generation of polar nano regions (PNRs) are considered as the main effect of the weird relaxors properties. However, there is still no conclusion about their generation mechanism. In order to investigate the random-field effect on domain morphology and dielectric properties in normal ferroelectrics and relaxors, we adopted Ab initio and Monte Carlo simulation, respectively. We calculated the domain wall energy barriers of Pb0.5Zr0.5TiO3 and Sr0.5Ba0.5Nb2O6 by Ab initio and Nudged Elastic Band. However, the actual atom diffusion path is not a linear path that we set, so the result was not accepted. On Monte Carlo part, we use Ising model to research the domain morphology and dielectric properties under different a.c. field for both materials and attempt to establish the corelation between domain morphology and dielectric properties. The susceptibility of the materials is positive correlated to their polarization ability. The easier the material polarized, the higher the susceptibility. For normal ferroelectric and relaxors, the lattice polarization contributes the highest proportion to their total polarizations. Thus under a.c. field, the susceptibility would rise as the flipping dipoles increase in the field cycle. The simulation results show that the quantities of flipping dipoles would be greater under higher temperature、stronger field amplitude or lower field frequency conditions so that the susceptibility would also be higher. Due to the random-field effect in relaxors, they possess more flipping dipoles under lower temperature conditions, so the susceptibility of relaxors is higher than normal ferroelectrics and Tm (the temperature where the peak of real part susceptibility tale place) is lower than normal ferroelectrics.
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校內:2015-08-28公開