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研究生：	李秋雯 Lee, Chiu-Wen
論文名稱：	軋延銅箔-錫界面之反應行為研究 Investigation on the Interfacial Behavior between Copper Foil and Tin
指導教授：	林光隆 Lin, Kwang-lung
學位類別：	碩士 Master
系所名稱：	工學院 - 奈米科技暨微系統工程研究所 Institute of Nanotechnology and Microsystems Engineering
論文出版年：	2007
畢業學年度：	95
語文別：	中文
論文頁數：	88
中文關鍵詞：	時效熱處理、分解、擴散、孔洞、銅錫介金屬化合物、凹槽
外文關鍵詞：	grooving, diffusion, decompose, aging heat treatment, void, Cu-Sn IMC
相關次數：	點閱：119 下載：4
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銅錫介金屬化合物是最易發生在電子構裝上連接電子元件和印刷電路板的銲接點之界面介金屬化合物之一，而經一長時間則易有孔洞生成於銅基材和Cu3Sn化合物及Cu3Sn化合物和Cu6Sn5化合物。界面有孔洞存在會影響電子產品的使用壽命，嚴重則導致電路斷路。
本研究係探討觀察金屬銅-錫界面在高溫時效熱處理(125℃)於不同時間下，其界面微結構和介金屬化合物的變化現象及孔洞成長行為。本實驗以軋延銅箔和純金屬錫在迴焊後研磨至觀察面，把試片放置烘箱內(125℃)，再於不同時間點觀察界面微結構變化。至時效熱處理1475小時由試片另一端於不同時間下使用CP(Cross-section Polish)作觀察內部界面微結構變化及孔洞生成。
至時效熱處理90小時，在靠近錫基材的扇貝狀Cu6Sn5化合物之尖端被分解而消長，其上方的Cu3Sn化合物則呈現迅速成長。然而在經時效熱處理2854小時後，Cu3Sn化合物和Cu6Sn5化合物仍持續緩慢成長，但在944小時前為迅速成長的形態。在為一自由表面，Cu3Sn化合物會呈現突出於共平面的方向成長，而Cu6Sn5化合物則會產生凹陷於共平面，因表面的Cu6Sn5化合物表面自由能高，而易被分解成Cu3Sn化合物和錫原子。
時效熱處理2455小時經CP處理後，可發現在試片內部已有少量的孔洞生成於銅基材和Cu3Sn化合物界面；至2616小時後再使用CP處理，則可觀察到孔洞已幾乎連成一線存在銅基材和Cu3Sn化合物界面，而在2854小時的表面銅基材和Cu3Sn化合物界面仍沒有孔洞被發現，因內部的擴散速度與在表面的擴散速度不同。

Tin-Copper intermetallic compound is one of the most common compounds that form at the interface between solder and substrate. Voids could form between Copper substrate and Cu3Sn、 Cu3Sn、Cu6Sn5 compounds upon heat aging. The voids may segregate to induce circuit opening.
This present study investigated the variations in interfacial microstructure, IMC, and voids formation phenomenon at the Sn/Cu interface upon heat treatment at 125℃. Void was observed after aging 1475 hours.
The scallop Cu6Sn5 compound decomposes after heat aging for 90 hours, while the upper Cu3Sn compound grew rapidly. However, the Cu3Sn and Cu6Sn5 compounds keep growing when aging up to 2854 hours. The Cu3Sn compound intends to grow in the Z direction while the Cu6Sn5 compound grow on the X-Y plane when the compounds grow on a free surface.
Voids were observed at the interface between copper substrate and Cu3Sn compound in the specimen after 2455 hours thermal effect and CP process. The voids segregate to form a linear crack after aging for 2616 hours. On the other hand, no void was observed after 2854 hours between copper substrate and Cu3Sn compound. This phenomenon was ascribed to the difference in diffusion speed between bulk diffusion and surface diffusion.

中文摘要……………………………………………………………I
英文摘要……………………………………………………………II
誌謝…………………………………………………………………III
總目錄………………………………………………………………IV
表目錄………………………………………………………………VI
圖目錄………………………………………………………………VII
第壹章	簡介……………………………………………………1
1-1  電子構裝技術………………………………………………1
1-2  球柵式陣列構裝……………………………………………8
1-2-1  銲線接合…………………………………………………8
1-2-2  覆晶接合…………………………………………………14
1-3  基板的銲錫墊表面處理……………………………………16
1-3-1  金/鎳/銅…………………………………………………16
1-3-2  有機保焊膜(OSP) ………………………………………17
1-4  銲錫合金與基材的界面反應………………………………20
1-4-1  銲錫規範…………………………………………………20
1-4-2  銲錫合金元素對界面反應之影響………………………24
1-4-3  銅錫介金屬化合物………………………………………26
1-5  銲錫時效熱效應……………………………………………30
1-6  研究目的……………………………………………………30
第貳章	實驗方法與步驟………………………………………31
2-1	實驗構想與設計………………………………………31
2-2	試片製作………………………………………………31
2-2-1  銅箔片的前處理…………………………………………31
2-2-2  製作流程…………………………………………………31
2-2-3  迴焊條件…………………………………………………33
2-3	試片處理………………………………………………33
2-3-1  横切面處理………………………………………………33
2-3-2  試片離子減薄處理………………………………………33
2-4	 試片分析 ……………………………………………34
2-4-1  掃瞄式電子顯微鏡分析…………………………………35
2-4-2  X光能量分佈光譜儀 ……………………………………35
2-4-3  X光繞射分析 ……………………………………………35
第參章	結果與討論……………………………………………37
3-1  初期界面介金屬化合物之生成行為………………………37
3-2  熱效應對界面介金屬化合物之影響………………………40
3-2-1  1000小時的界面介金屬化合物之生成行為……………40
3-2-2  時效至2000小時的界面介金屬化合物之成長行為……51
3-2-3  時效至3000小時的界面介金屬化合物之成長行為……55
3-3  試片深層之微結構觀察……………………………………61
第肆章	結論……………………………………………………72
參考文獻 …………………………………………………………73
自述 ………………………………………………………………78
                                    

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校內：2008-08-08公開
校外：2009-08-08公開

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