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研究生：	王時君 Wang, Shih-Chun
論文名稱：	氧化鋅薄膜特性及其在表面聲波元件之應用 Characterization of ZnO Thin Film and Its Applications on Surface Acoustic Wave Devices
指導教授：	蘇炎坤 Su, Yan-Cuin
學位類別：	碩士 Master
系所名稱：	工學院 - 微機電系統工程研究所 Institute of Micro-Electro-Mechancial-System Engineering
論文出版年：	2004
畢業學年度：	92
語文別：	英文
論文頁數：	95
中文關鍵詞：	表面聲波、氧化鋅薄膜、濾波器。
外文關鍵詞：	SAW, ZnO thin film, filter.
相關次數：	點閱：48 下載：6
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　　本論文第一部份主要是研究以射頻磁控濺鍍法，在矽與石英基板成長 (002) 軸向之高品質氧化鋅薄膜，藉由調變不同製程參數，如濺鍍功率、基板溫度、氧氣與氬氣流量比例、製程壓力對薄膜特性的影響，利用膜厚量測儀、X光繞射儀、原子力顯微鏡檢測薄膜厚度、薄膜晶體結構、薄膜表面粗糙度。實驗結果顯示，沈積高品質氧化鋅薄膜的最佳參數為：濺鍍功率為200W、基板溫度為2000C、氧氣與氬氣流量比例為40 %、製程壓力為10mtorr.

　　第二部分是選用高品質的氧化鋅薄膜，搭配上矽和石英基板去分別製作兩種層狀表面聲波元件。藉由改變不同的交指狀電極對數、金層柵欄數目、延遲距離、氧化鋅膜厚等，我們比較了兩種層狀表面聲波元件的頻率響應，包含中心頻率、插入損失、頻寬、波速、衰減係數等表面聲波元件之重要參數。

　　綜合言之，我們成功的以射頻磁控濺鍍法製作出了高品質的氧化鋅薄膜。利用高品質的氧化鋅薄膜，我們也成功的在矽和石英基板上製作出可用的層狀表面聲波元件並分析其特性。

　　This study could be divided to two parts. The first part : poly-crystal ZnO films with c-axis (002) orientation have been successfully grown on the silicon and quartz substrate by RF magnetron sputtering technique. The deposited films were characterized as a function of RF power, deposition temperature, argon-oxygen gas flow rate and sputtering pressure. Thickness, crystal structure and surface roughness characteristics of the film were investigated by nanospec, X-ray diffraction (XRD), atomic force microscopy (AFM ) measurement. The experimental result shows the optimum are RF power is equal to 200 W, deposition temperature is equal to 2000C, argon-oxygen gas flow rate is equal to 40% and sputtering pressure is equal to 10mtorr.

　　The secondary part : we use the c-axis (002) orientation ZnO thin film with above parameters to fabricate two layer-structure surface acoustic wave (SAW) devices Al-ZnO-Si and Al-ZnO-Quartz respectively. By changing the IDT pair, grating number, delay line distance and ZnO film thickness etc, we compare the frequency response of two layer-structure SAW devices which includes center frequency, insertion loss, bandwidth, phase velocity and propagation loss.

　　Summarily, we can fabricate high qualitative ZnO thin film by RF magnetron sputtering technique successfully. By using the high qualitative ZnO thin film, we also successfully fabricate usable layer-structure SAW devices on silicon and quartz substrate and discuss their characterizations.

Contents
Abstract (in Chinese)....………………………………………….Ⅰ                                  Abstract (in English).…………………………………………….Ⅲ                               
Contents.…………………………………………………….........Ⅴ                                         
Table Captions………………………………………………........Ⅸ                                    
Figure Captions………………………………………..................Ⅹ                                                         

Chapter 1 Introduction.......................................................1                        
1 Reason for the study.........................................................................1
1.1 Piezoelectric Thin Film................................................................1
1.2 Surface Acoustic Wave Devices...................................................1
l.2 Literatures Review............................................................................2

Chapter 2 Fundamental Theory.........................................4 
1 The Introduction of ZnO..................................................................4
2 Theory of sputter................................................................................4
3 Theory of plasma...............................................................................5
3.1 Magnetron sputtering...................................................................8
3.2 RF sputtering................................................................................9

4 Theory of Thin Film deposition......................................................9
5 Basic nature of Piezoelectricity....................................................11
5.1 Piezoelectric Effect.....................................................................11
5.2 Piezoelectric equation.................................................................12
5.3 Piezoelectric Materials...............................................................16
6 Fundamental Theory of SAW Devices.......................................17
6.1 Wave Equations..........................................................................18
6.2 Fundamental Theory of SAW Devices.......................................22
6.3 Grating Number and Delay Line................................................23

Chapter 3 Experimental process and methods...............37
1 Experiment Flow Chart..................................................................37
2 Material Selection............................................................................38
3 Thin Film Sputtering.......................................................................38
3.1 Substrate Clean...........................................................................38
3.2 Thin Film Sputtering..................................................................39
4 ZnO Thin Film Analysis.................................................................40
4.1 Film Thickness Analysis............................................................40
4.2 Film Quality Analysis (XRD)....................................................40
4.3 Film Surface Analysis (AFM)....................................................41
5 SAW Device Fabrication................................................................41

Chapter 4 ZnO Thin Films Characterizations................50
1 Influence of RF Power on ZnO Film...........................................50                 
1.1 Film Thickness Analysis.............................................................51
1.2 XRD Analysis.............................................................................52
1.3 AFM Analysis.............................................................................52
2 Influence of Substrate Temperature on ZnO Film....................53
2.1 Film Thickness Analysis.............................................................53
2.2 XRD Analysis.............................................................................54
2.3 AFM Analysis.............................................................................54
3 Influence of Oxygen Ratio on ZnO Film....................................55
3.1 Film Thickness Analysis.............................................................55
3.2 XRD Analysis.............................................................................55
3.3 AFM Analysis.............................................................................56
4 Influence of Pressure on ZnO Film..............................................56
4.1 Film Thickness Analysis.............................................................57
4.2 XRD Analysis.............................................................................57
4.3 AFM Analysis.............................................................................57
5 Discussions........................................................................................58

Chapter 5 SAW Devices Characterizations.....................74           
1 IDT pairs.................................................................................75
  
2 Grating Number................................................................................76
3 Substrate.............................................................................................76
4 Delay line...........................................................................................77
5 The Thickness of ZnO Thin Film.................................................77
5.1 Phase velocity...............................................................................77
5.2 Propagation loss...........................................................................78

Chapter 6 Conclusion........................................................91
1 Conclusion.........................................................................................91
2 Future Work.......................................................................................92

Reference............................................................................93
                                    

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