本論文是利用有機金屬化學氣相沉積方法之技術，針對氮化鎵（InGaN/GaN）藍綠光發光二極體成長及特性作研究。為了提昇輸出亮度及改善抗靜電特性（ESD），我們從結構上作調整改變，我們發現增加多層亮子井的層數及利用部分參雜的技術，以及增加p-GaN層的厚度及表面粗化，可以明顯地增加亮度，同時也發現增加p-AlGaN這一層對於抗靜電的特性改善方面，有非常大的突破。
在我們的實驗中，氮化鎵藍光發光二極體在輸出功率方面由最初的約7 mW 到實驗最後提升到約15 mW，而在抗靜電特性方面（人體模式HBM），-5000 V的通過率，由最初的0 % 增加到80 %以上。
這些LEDs可靠度的測試結果是好的而且是可信賴的。

In this thesis, we studied the growth and characterization of blue/ green InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs) grown by metalorganic chemical vapor phase deposition (MOCVD). In order to improve the output power and the electrostatic discharge (ESD) characteristic, we had to modify the LED structure, it is found that we could increase output power by increasing the thickness of p-GaN layer and periods of the MQW and using partial-doped in the MQW. It was found that via the insertion of p-AlGaN layer, not only the ESD pass yield (-1000 V) was significantly increased but the reverse voltage was better than reference.
In our experiment, the output power was increased to 2 times higher than that of conventional at the 20 mA, and the rising to more than 80 % from 0 % through the ESD pass yield (-5000 V) at the human body mode (HBM).
The reliability of these LEDs was also found to be reasonably good.

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