對於封裝結構，熱應力為影響其可靠度的重要因素之一。更高精度的相位移技術，可用來觀測更細微區域之應變場分佈，其解析度為傳統干涉儀的八倍或更高。因此，由雲紋干涉圖像可精確地分析產品的位移與應變量。
本研究主要是以縮短原先後處理時間為目標，整合出一套新的後處理軟體，後處理工作主要處理雲紋干涉儀所拍攝之U/V場各四張相位移雲紋圖像，應用影像處理技術得到高解析度的相位圖並擷取其中欲觀察之部分，計算其受熱應變之行為。處理內容包含五個步驟：第一為將U/V場相位移圖進行疊合，判斷是否相位相消；第二為將U/V場相位移圖利用小波轉換分析及相位移法形成U/V場兩張高解析度相位圖 (208 nm/fringe)；第三為處理兩張高解析度相位圖，形成位移圖 (52 nm/fringe)；第四為處對照高解析度相位圖與實體圖，擷取欲觀察部分；第五為分析所截取之部分得到該部分的變形量及應變。
本研究的案例分析以低介電值材料 (low-k materials) 覆晶陣列錫球構裝 (FC-BGA) 產品來做實驗，由於低介電值材料都具多孔性，在焊線接合時機械強度不足，故選此材料結構來分析。在計算其試片整體的橫向變形，可發現在錫球銲接點部分的橫向位移量僅在5 μm左右，並不會產生破壞的行為。使用新的後處理軟體與先前軟體的處理，可得到相近的變形量與相同的展開趨勢。
新的後處理軟體直接選取八張相位移影像後，即可得到疊圖、高解析度相位圖以及位移圖，並且可直接進行相對位置的擷取，並直接對所擷取之影像進行分析。原先後處理時間需要近三個小時，新軟體可有效縮短在十分鐘內完成分析，改善從前採取人工計算獲取條紋的翹曲量往往無法判定角邊的條紋數及原先分析軟體需避免過大的雲紋圖像輸入軟體中，導致計算失效的問題。

For controlling the structural reliability, thermally induced stresses play an important role. More accurate phase shift technique can be used to observe more subtle area of the strain fields. The resolution of moiré interferometry is up to 8 times greater than conventional moiré interferometry. Hence, accurately determine displacements and strains can be determined by moiré interference fringe.
In this study, we focus on reducing current post processing time as a target, and to integrate a new post processing software. Main post processing works are to deal with four Moiré phase shift images of U/V field, using image processing techniques to get high resolution phase maps, and capturing parts of images we want to observe. New approach includes five steps. The first objective is to superimpose U/V-fields' eight images, and to check if the final pictures are fringe-free, then you may need to reshoot U/V-fields' eight images. The second objective is to convert eight images to two high resolution phase images (208 nm/fringe) by using wavelet transform and phase-shifting techniques. The third objective is to convert two high resolution phase images to phase images (52 nm/fringe), and to check if the spacing between the fringes fluctuates are periodically. The fourth objective is to contrast optical image and U/V-fields' phase images, and to capture the interesting regions. The final objective is to deal with the capture regions, and to do strain field analysis.
In order to quantitatively find out the physical relation between package micron-level warpage and solder bump nano-level displacement, a systematic study of warpage characteristics of 1112-ball flip-chip BGA with and without a heat spreader was carried out in this study. From the experiment U-field results, the displacement only about 5 μm that didn't cause samples to damage. And compare with Proposed and current approach, proposed processing approach had the same deformation and trend as current processing approach.
Proposed processing approach select the eight phase shift images directly, and get superimposed images, high-resolution phase maps (208 nm/fringe) and phase maps (52 nm/fringe). Moreover, proposed processing approach captures relative positions between physical and high-resolution phase maps directly and analyzes these maps which are captured. Current processing approach need about three hours to complete analysis, but proposed processing approach completes analysis within ten minutes. This new software improves manual calculation of fringe number and calculation of warpage that can not determine the fringe number of corners, and improves current analysis software can not work when we input too large moiré images.

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