本研究以二氧化鈰/摻氟氧化錫(CeO2/FTO)感測膜製作延伸式閘極場效電晶體酸鹼度感測器(EGFET-type pH sensors)，旨在探討製備變因對粉體性質、薄膜性質與型態及感測特性之影響，以尋求最佳感測條件。
研究中以沉澱熟成法製備CeO2奈米粒子，經分散後以旋轉塗佈於FTO基材，改變製備變因包含：H2O2濃度、NaOH濃度、固含量、分散劑重量組成、旋轉塗佈速率及煅燒溫度等參數加以探討。結果發現，隨著H2O2濃度、NaOH濃度分別提升到10 wt%及3 M時，CeO2具有最高的比表面積，感測靈敏度亦最大，且感測靈敏度與CeO2比表面積成正相關，顯示活性座主導感測靈敏度。隨著固含量增加，CeO2於FTO表面沉積量亦增加，增加活性座數目以提升感測靈敏度，但隨著固含量過高使薄膜片電阻顯著上升，造成感測靈敏度下降。隨著分散劑重量組成上升，可有效抑制CeO2粒子團聚，使均勻沉積於FTO基材，使有效活性座數目上升，因此感測靈敏度上升，但是隨著分散劑重量組成上升的同時，分散液黏度亦增加，因此薄膜厚度增加，造成片電阻上升，造成感測靈敏度下降。隨著旋轉塗佈速率增加，薄膜片電阻下降，提升高測靈敏度，但轉速提升的同時也使CeO2沉積於FTO基材表面數目下降，因此活性座下降，造成感測靈敏度下降。煅燒溫度提升時，可使CeO2粒子結晶性增加，晶粒變大有利電訊傳遞，同時CeO2粒子與FTO基材之附著力亦增加，因此感測靈敏度亦增加。由實驗結果顯示，最佳元件(S1-XA24-A)之最適化製備條件為：H2O2濃度10 wt%、NaOH濃度3 M、固含量1.09 wt%、分散劑重量組成為24倍、旋轉塗佈速率2000 rpm、煅燒溫度600℃；於20 ℃下，最佳元件感測靈敏度達85.34±0.60 mV/pH，線性度為0.9982，適用範圍於pH 2-12，遠高於能斯特極限(其值為58.2 mV/pH at 20 ℃)。吾人進一步以最佳元件進行遲滯、時漂、陽離子干擾、離子強度干擾、對離子大小等效應之探討，由結果可知本元件穩定性良好、氫離子選擇性高且不易受外界影響，顯示此元件具備感測優勢。值得一提的是，從對離子大小效應結果得知對離子大小對感測結果具有影響力，當對離子水合離子直徑越大(超過3.5 Å)時，感測靈敏度上升幅度明顯，此為超越能斯特極限原因之一。
綜觀以上，以CeO2奈米粒子修飾FTO元件，不只能提升高測靈敏度，同時也增加元件穩定性及選擇性，各實驗結果均顯示本元件具有極大發展潛力。

In this work, CeO2/FTO pH sensors based on extended gate field-effect transistor (EGFET) were fabricated. The influences of preparation parameters on properties of CeO2/FTO sensing films were investigated. The pH sensing characteristics of CeO2/FTO devices were also studied to find the optimum preparation condition. Experimentally, CeO2 nanoparticles prepared by the precipitation method with aging were spin-coated on the FTO substrate. The influences of preparation parameters of resulting devices including H2O2 concentration, NaOH concentration, solid content, dispersant composition, spinning rate, calcination temperature were studied. Among the studied CeO2/FTO devices, the best device (S1-XA24-A) demonstrated excellent sensing characteristics with super-Nernstian sensitivity of 85.34±0.60 mV/pH and the linearity of 0.9982 applied to pH2-12 at 20℃, which was prepared under H2O2 concentration of 10wt%, NaOH concentration of 3 M, solid content of 1.09wt%, dispersant composition of 24, spinning rate of 2000rpm, and calcination temperature of 600℃. From the investigation of hysteresis effect, drift effect, cation interference, ionic-strength interference, and counter-ion size effect, the result indicated that the S1-XA24-A device showed good stability and high H+ selectivity. From the results of the counter-ion size effect, it showed that the counter-ion size has an obvious influence on the sensing result.

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