本論文中，我們成功地以低壓有機金屬化學汽相沉積法(LP-MOCVD)研製以磷化銦(InP)為基礎之異質接面雙極性電晶體。吾人將量測並討論砷化銦鎵/磷化銦(InGaAs/InP)超晶格式-集極異質接面雙極性電晶體及複合式-集極磷砷化銦鎵/砷化銦鎵(InGaAsP/InGaAs)異質接面雙極性電晶體的特性；另外，並將針對兩種新穎式光電開關深入探討其作用原理。

　　首先吾人提出一種具超晶格式-集極之砷化銦鎵/磷化銦異質接面雙極性電晶體。在超晶格結構之中，由集極注入的電洞衝擊原先被束困在超晶格結構中的電洞，並使其衝擊游離越過價電帶的不連續位障，脫離原本受困的超晶格結構。因為這些被衝擊游離的電洞將注入基極，導致射-基接面的順向偏壓增加，使本元件集-射極在低於崩潰電壓的操作電壓之下，基極的電流減小，而電流增益也可順勢增加；因此，本研究元件之交流電流增益高達204。而共射極電流增益在極低集極電流區域不只可高達47；而且在相當廣的集極操作電流區域時，本研究元件仍具有相當大的電流增益。

　　另外，吾人也提出一複合式-集極磷砷化銦鎵/砷化銦鎵異質接面雙極性電晶體，由於基-射極接面間的磷砷化銦鎵背置層，有效地抑制了兩異質接面間的位能障及電流阻隔效應。此外，由於基-集極間為同質接面，電流阻隔效應也不復存在，因此本元件展現了許多良好的電特性--包含低補償電壓及低飽和電壓。此外，一般會伴隨以磷化銦材料系統為基礎所研製之異質接面雙極性電晶體之低崩潰電壓特性，在本元件中亦不復見。本元件展現的最大交流電流增益為118，而有效電流增益區域亦展延至相當廣的集極電流操作範圍。

　　再則，本文亦提出一結合雙重位能障及三角形位能障的光電開關元件。元件在順向偏壓操作之下，載子經由共振穿透效應穿透過雙重位能障，產生了N型的負微分電阻現象；而在反向偏壓操作之下，由於累增崩潰效應、載子堆積及電位重新分佈的結果，使吾人發現S型負微分電阻現象。因為這些負微分電阻特性會隨著入射光源的變化而改變，所以，吾人將之稱為光電開關。另外，操作溫度對本元件電特性的影響，在本文中我們亦將深入探討。

　　另一方面，一種具層型位障砷化鋁鎵/砷化鎵/磷化銦鎵鋁之光電開關元件將被提出。此元件結構特徵為集極主要由為砷化鋁鎵/n型單原子摻雜層/砷化鎵/磷化銦鎵鋁結構所組成。此元件經由負微分電阻區域轉換區分為低電流態及高電流態；而經由注入光源或電源可控制這雙態的轉換。本光電開關元件在光源照射後所顯現的諸多特性，如交換電壓(switching voltage)、保持電壓(holding voltage)、交換電流(switching current)及保持電流(holding current)，與先前許多研究團隊所提出的負微分電阻及光電開關元件之特性不盡相同。此外，在操作溫度高達絕對溫度423度時仍能保有負微分電阻的特性，使本元件擁有極寬廣之操作溫度範圍並且可提供在高溫操作應用的可能性。

　In this dissertation, we have successfully fabricated and demonstrated InP-based heterojunction bipolar transistors (HBTs). The characteristics of InP/InGaAs HBT with a superlattice-collector (SC) structure and InGaAs/InGaAsP composite-collector HBT (CCHBT) are measured and discussed. In addition, two interesting optoelectric switches, a double-barrier-emitter triangular-barrier optoelectronic switch (DTOS) and a bulk-barrier optoelectronic switch (BBOS) with an AlGaAs/δ(n+)-doped sheet/GaAs/InAlGaP collector structure are also investigated and discussed.

　The studied devices were grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD) and molecular beam epitaxy (MBE). The characteristics of epitaxial layers will be analyzed by double-crystal x-ray diffraction (DCXRD), photoluminescence (PL), and electrochemical CV profiling (ECV). After finishing the growth, mesa-type devices were formed by utilizing photolithography, vacuum evaporation, lift-off, alloying and selective etching techniques.

　DC characteristics of an interesting InP/InGaAs heterojunction bipolar transistor with a superlattice (SL) structure incorporated in the base-collector (B-C) junction are demonstrated. In the SL structure, holes injected from the collector collide with holes confined in the SL and impact them out of the SL across the valence-band discontinuities. With a collector-emitter (C-E) voltage VCE less than the C-E breakdown voltage BVCEO, the current gain can be increased at base-current inputs because the released holes from the SL inject into the base to cause the E-B junction operating under more forward-biased condition. An AC current gain up to 204 is obtained. At B-E voltage VBE inputs, the released holes travel to the base terminal to decrease the base current. The studied HBT exhibits common-emitter current gains exceeding 47 at low current levels and useful gains spreading over 7 orders of magnitude of collector current.
DC characteristics of an interesting HBT with an InGaAs/InGaAsP composite-collector (CC) structure are studied and reported. Due to the insertion of an InGaAsP setback layer at the base-emitter (B-E) heterojunction, the potential spikes as well as the electron blocking effect are suppressed significantly. In addition, the presence of an effective base-collector (B-C) homojunction can substantially reduce the current blocking effect. The studied device gives impressed dc performance including small offset and saturation voltages without degrading the breakdown behaviors. The typical dc current gain of 118 and the desired current amplification over 11 decades of magnitude of collector current IC are obtained.

　On the other hand, a triangular-barrier and a double-barrier structure are combined to form a double-barrier-emitter triangular-barrier optoelectronic switch (DTOS). In the structure center of the triangular barrier, a p-type delta-doped quantum well is inserted to enhance the hole confinement. Owing to the resonant tunneling through the double-barrier structure and avalanche multiplication in the reverse-biased junction, N-shaped and S-shaped negative-differential-resistance (NDR) phenomena occur in the current-voltage (I-V) characteristics under normal and reverse operation modes, respectively. The NDR characteristics show variations from dark to illumination condition. Temperature effects on the NDRs of the DTOS are also obvious. The illumination and temperature influences on the device characteristics are investigated.

　Two-terminal switching performances are observed in a new bulk-barrier optoelectronic switch (BBOS) with an AlGaAs/δ(n+)/GaAs/InAlGaP collector structure. The device shows that the switching action takes place from a low current state to a high current state through a region of NDR. The transition from either state to the other may be induced by an appropriate optical or electrical input. It is seen that the effect of illumination increases the switching voltage VS, holding voltage VH, holding current IH and decreases the switching current IS, which is quite different from other reported results. In addition, it possesses obvious NDR even up to 435K. This high-temperature performance provides the studied device with potential high-temperature applications.

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