本研究探討於5052鋁合金上結合複合式脈衝陽極氧化(Hybrid Pulse Anodization, HPA)技術，於室溫(25 °C)低電位(40 V)草酸及低溫(0 °C)高電位(150 V)磷酸電解液中製備奈米多孔型陽極氧化鋁(Anodic Aluminum Oxide, AAO)模板。為了解決鋁合金粗糙表面不利於陽極氧化鋁模板生長，首先針對陽極氧化前處理中電化學拋光製程改善，透過調整過氯酸與乙醇拋光溶液濃度以兩階段式電化學拋光取代原有一次電化學拋光製程，不僅有助於改善陽極氧化鋁模板孔洞形貌同時可使陽極氧化製程穩定度提升。接著進行兩種不同製程，分別為兩階段室溫低電位草酸及低溫高電位磷酸陽極氧化製程，結合複合式脈衝陽極氧化有效移除焦耳熱成功於5052鋁合金上製備AAO模板，並以場發射式電子顯微鏡(FE-SEM)觀察5052鋁合金AAO形貌，發現於相同製程參數下其孔洞形貌及結構與純鋁AAO有明顯差異，由於5052鋁合金中含有2.2~2.8%的鎂元素，將會在陽極氧化過程中反應形成氫氧化鎂並放出反應熱，導致陽極氧化反應加速而使5052鋁合金AAO成長速率高於高純度(99.99%)鋁AAO，而氫氧化鎂生成時所產生之氫氣與反應熱同時也造成5052鋁合金AAO孔徑有所改變。在5052鋁合金AAO-PL光譜中，各參數所製備AAO之主要PL波峰皆位於波長420 nm附近，且PL訊號強度隨著陽極氧化時間與電位的增加而使氧缺陷及草酸根離子摻雜量增加而變強，但隨著擴孔時間增加，氧缺陷及草酸根離子脫離AAO孔壁，含量減少而導致PL訊號減弱；同時可觀察到隨著陽極氧化電位上升於波長470 nm之波峰產生偏移，推測為陽極氧化電位上升使反應加劇而使5052合金中其他元素摻雜進入AAO孔壁中所致。最後，使用一階段所製備之5052鋁合金AAO並於表面濺鍍上鉑金層作為表面拉曼增強散射(SERS)之基板，開發一快速、簡易及低成本之SERS基板，分別使用不同陽極氧化電位與不同擴孔時間製備出不同孔徑大小基板，並從SERS基板結構與UV-vis反射光譜去分析其拉曼增強效應之差異。

Anodic aluminum oxide (AAO) template has been widely applied to different fields such as photonics, semiconductor, biomedical, chemical engineering and so on. Conventional AAO template was formed using direct-current anodization (DCA) from high-purity (99.99% or more) aluminum (Al) foil at low temperature (0~10 °C). In this article, we have successfully demonstrated the greatly enhanced growth behavior of 5052 Al-Mg alloy (95.5% Al) using hybrid pulse anodization (HPA) with pulsing normal-positive and small-negative potential to synthesize nanoporous AAO at room temperature (RT, 25 °C). The growth rate at RT is higher than that at low temperature. The Mg impurity in the 5052 Al alloy plays an important role during anodization; it influences the AAO property and composition. The Mg contents in 5052 Al alloy could contribute to the growth of AAO. Also, the AAO fabricated by 5052 Al alloy is found quite different from pure Al in the average pore size. In addition, we investigated the photoluminescence (PL) difference between 5052 Al alloy and high purity Al, to prove that the composition difference also caused in the optical characteristic change. In the end, we proposed a fast, easy and low cost SERS substrate by AAO from 5052 Al alloy and platinum to investigate the anodization parameters effect on enhancement of Raman intensity.

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