本論文利用電子束蒸鍍機製備銀奈米粒子，並探討不同銀厚度與熱處理條件下，對於表面電漿共振吸收的影響，包含吸收峰值位置與半高寬，也藉由SEM觀察銀粒子表面形貌。表面電漿共振吸收波長位置會受銀奈米粒子之顆粒大小、顆粒形狀以及週遭介電材料所影響。
表面電漿共振侷限在金屬叢聚(Metal Cluster)或金屬奈米粒子(Nanoparticle)結構附近稱為侷域性表面電漿共振(Localized Surface Plasmon Resonance, LSPR)。入射電磁波激發出侷域性表面電漿子時，會伴隨著兩種現象: (1)表面電漿共振吸收 (2)近場強烈電磁場增強。我們將此特性運用在氮化銦鎵系列光偵測器上，探討是否能利用銀奈米粒子來提升金屬-半導體-金屬(MSM)與金屬-絕緣層-半導體(MIS)光偵測器之光響應值。另外，我們由監控片確定表面電漿共振吸收波長位置有在氮化銦鎵及氮化鎵材料能隙邊緣。
由實驗結果我們得知將銀粒子埋藏在二氧化矽絕緣層內，並放置於上述兩種光偵測器之金屬與半導體接面間，且二氧化矽層厚度要夠薄，此時方能有效將表面電漿共振吸收耦合給半導體，增加光電流，提升光偵測器效能。另一方面，直接將製備完成之指叉狀電極MSM光偵測器，表面蒸鍍上二氧化矽與銀粒子，此時表面電漿子耦合效率差，故無法有效提升光偵測器之效能。

This study use E-beam to evaporate Ag films, and to discuss effect of different Ag thickness and annealing process on surface plasmon resonance absorption, which includes absorption peak and full-width half-maximum. We also use SEM to observe the surface morphology of Ag nanoparticles (NPs). Absorption peak of surface plasmon resonance was affected by particle size, shape and surrounding dielectric material.
While surface plasmon resonance was localized in metal cluster or metal nanoparticle structure, we call it localized surface plasmon resonance (LSPR). When electromagnetic wave to excite localized surface plasmons will accompany with two phenomena: (1) surface plasmon resonance absorption (2) enhance of localized electric field. We use these properties on InGaN series photodetectors (PDs) to discuss if we could promote responsivity of metal-semiconductor-metal (MSM) PD and metal-insulator-semiconductor (MIS) PD. In addition, we use monitoring sample to make sure absorption position of surface plasmon resonance at energy band gap edge of InGaN and GaN materials.
From the experiment results, embedding silver NPs in active layer of photodetector device will efficiently couple surface plasmon resonance absorption to semiconductor, by doing this could enhance photo current and promote performance of MSM PD and MIS PD, but SiO2 layer can’t be too thick. However, we directly evaporate SiO2 and Ag particles on MSM PD surface, there’s no performance promotion of photodetector because surface plasmon resonance absorption can’t efficiently couple to semiconductor.

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第四章
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