隨著電子元件科技技術發展，以及奈米元件尺寸越縮越小，通道內載子的震盪對設備性能的影響變得更加明顯。低頻雜訊這種現象通常是通道內的自由載子被氧化層或者氧化層介面的缺陷捕捉或發射，然後引起電特性的變化。 由於縮小器件尺寸時LFN對電特性的影響更為重要，因此LFN成為主流研究主題。
在本論文中，我們介紹了不同種類的低頻雜訊，接著我們利用三種不同的變數:溫度、陷阱濃度及陷阱的位置，來討論這些低頻雜訊(熱雜訊、G-R雜訊及閃爍雜訊)的特性。這份研究主要仰賴於 Sentaurus TCAD 來模擬與比較不同變數對低頻雜訊的影響。雜訊變得更加強大，可以歸因於較高的載子遷移率改善電流的結果。陷阱密度在不同的位置分佈顯示同樣的結果。導電性因為電子的捕捉/發射運動，這表示有越多的載子更可能被捕捉或發射，結果電流的震盪幅度會更劇烈，使得雜訊的功率譜密度變得更強大。

With the scaling down on CMOS technologies, the impact of discrete channel carrier on device performance becomes more apparent. The low frequency noise (LFN) phenomenon is commonly related to the behaviors of one or some carriers that have been captured and emitted by the oxide or interface traps and then causes the variation of electrical characteristics. Because the impact of LFN on electrical characteristics is more important when scaling down the device, LFN have become a mainline research topic.
In this study, we have organized and analyzed the noise definition and various type of low frequency noise. Finally, we have simulated the low frequency property (thermal noise, G-R noise and flicker noise) in MOSFET with different temperatures and various traps density which are distributed at various location (interface of Oxide/Si, bulk silicon and gate oxide) in the device by a TCAD tool. Trap densities distributing at different location show the same result that the conductivity of device becomes worse because of trapped/de-trapped behavior, which means more carriers, higher probability of trapping/de-trapping and then the stronger noise.

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