本研究以化學溶液法成長高順向性的氧化鋅奈米線陣列在熱蒸鍍的銀薄膜上，後續將包覆有氧化鎂的奈米線以高溫熱處理後，再進行奈米線電晶體的製作。溶液在經過適當的預熱時間後可以在銀薄膜上成長出長寬比較高的奈米線陣列。利用銀薄膜與奈米線的低附著力，滾壓法可以轉移高密度以及高順向性的奈米線至目標基板。研究以光激發光譜、化學特性分析、以及X光繞射等分析儀器，探討熱處理前、後氧化鋅/氧化鎂-核/殼奈米線的性質，可知此核/殼奈米線的光學性質有上升，且鎂原子有擴散進入氧化鋅奈米線內部的趨勢，此外熱處理後的氧化鎂有(200)的優選方向。在電性的部分，以滾壓法所製備的核/殼奈米線奈米線電晶體具有較大的電流，此電流與奈米線的表面缺陷無關，因此可歸因於奈米線內部的高載子傳輸速率。經由本研究的結果，在銀薄膜上成長的奈米線具有容易轉移至目標基板的特性，且經過氧化鎂包覆後可減少奈米線的表面缺陷。

In this research, the highly-oriented nanowire array grown on silver film has been successfully fabricated by chemical bath deposition (CBD) method, following by rolling transferring and photolithography process, the nanowire transistor with high electron mobility can be obtained. Also, the synthesis of higher aspect ratio nanowires can be achieved by pre-heat process. The lower adhesion force between nanowires and the growth substrate facilitated the fabrication of nanowire transistor.
A series of material measurements have been conducted from the aspects of morphological, structural, optical, and chemical properties. According to TEM and EDX analyses, heat treatment of nanowire coated with Mg(OAc)2 can reduce and smooth the thickness of the shell and PL analysis also showed that nanowire can perform better optical property after been coated with Mg(OAc)2. In ESCA analyses, besides, we demonstrated that Mg atoms can diffuse from the shell into the core of nanowires during the heat treatment.
In the end, we also demonstrated a methodology to transfer vertically aligned nanowires from the growth substrate to target substrate via rolling process with the use of PDMS film as a transferring medium. By this unique method, dense and oriented assembly of nanowires can be obtained and high electron mobility nanowire transistor can be fabricated.

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