黏晶製程是銜接IC上下游製程中的一個製程，它負責將晶體吸取到承載基板上，利用填充膠將其粘合在一起，故其品質將相當重要。
近來在FILM-BGA陸續發現晶體破裂現象 我們發現在黏晶製程中，填充膠與Die 面若發生回吸或剝離時，因熱應力的分布不均勻，將間接導致晶體破裂發生的情況。
本文即先從黏晶製程的機台機構上,設計黏晶製程,克服基板翹曲的現象，再使用工業界常使用的田口式品質設計方法，將填充膠的控制列為品質特性，然後最佳化參數設計。
結果發現：若填充膠的出水（wetting）良好，不產生回吸或剝離的狀況，便可將晶體破裂的產生情形降至最低。我們使用最後選擇的最佳參數組合來做確認，晶體破裂的情況從2001年的2482ppm已逐月降至2002年的90ppm，由結果可知已大幅改善。所以從Die Bond製程上的改良和運用田口氏品質設計來最佳化參數，是確實達到其效果的。不僅可避免缺陷的發生，亦可在製程中省下可觀的成本。

Die bond process was an important process connected with IC’s wafer and assembly manufacture.
It taked charge to pick up dies to substrate from wafer and adhesion together by taking advantage of glue, so it’s quality was more important.
Recently we found die crack situation at film BGA. We discovered it had die crack issue if had glue draw back, delam problem between die and glue surface at die bond process. Because thermal stress distribution not uniform, it would let die crack happen indirectly.
First, design die bond process because Film BGA substrate must overcome warpage issue, next, use TAGU-CHI DOE method, fillet height control was quality characteristic and optimal parameter design.
Result, discovered die crack situation would be improved if glue wetting was good and draw back, delam were not happen. Used optimal parameter to confirm result and discovered die crack situation decrease from 2482ppm to 90 ppm , it had improved. So die bond process improvement and TAGACHI method optimal parameter ensure to reach the golden goal. It was not only avoided defect happen and saved cost at the die bond process.

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