本論文使用原子力顯微鏡微影術(Atomic Force Microscope Lithography, AFM-Lithography)在SOI(100)試片的矽表面上製作次微米寬的光柵圖案。論文分為兩主軸討論，首先，我們改變掃描探針局部氧化時之偏壓大小、探針掃描速率與所加偏壓之形式等實驗參數，在矽表面上寫出線寬小於500nm的氧化線(SiO2)，並歸納出最佳之氧化微影參數。第二部份為非等向性溼式蝕刻(Anisotropic Wet Etching)之研究，我們利用氧化線為保護遮罩，使用蝕刻溶液TMAH在SOI(100)試片上蝕刻出光柵結構，改變蝕刻時間、蝕刻溫度與是否攪拌等實驗參數，整理出理想之非等向性溼式蝕刻參數。經過實驗，我們利用交流偏壓定義氧化光柵圖案，經過3分鐘70℃之TMAH蝕刻後，在SOI(100)試片上製作出線寬約500nm、高度達500nm之光柵結構。

The theory is focused on the fabrication of grating structure on SOI(100) wafers using the method of AFM lithography. The grating patterning was a periodic structure of oxidation lines written on silicon surface using a voltage biased AFM nanoprobe. With the lines of silicon oxide serving as resistant, the gratings were wet-etched and formed using the silicon solvent TMAH. Operation parameters of the AFM nanoprobe as the scanning speed, biased voltage, voltage form (AC/DC) and frequency were evaluated. Anisotropic wet-etching parameters as etching time, temperature and stirring were also studied. In experiment, a grating of the grating period of 1μm, grating line width of 500nm and grating depth of 500nm was achieved by 3-min wet etching in TMAH at 70℃ using a 1 kHz AC voltage source.

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