鈉的添加是一個會影響CI(G)S太陽能電池效能的重要因子。然而目前大部分的研究著重在鈉與硒化銅銦鎵(CuInGaSe2)薄膜的關係，相較之下關於鈉的添加與硫化銅銦(CuInS2)薄膜的研究非常少。
因此，在論文中將討論在CuInS2中摻雜鈉後薄膜特性的變化。此外，我們使用了一種特殊的方法來製備含鈉之CuInS2薄膜。首先，以Cu及In二元共蒸鍍先形成Cu-In薄膜，接著在Cu及In沒有停止的情況下再加入NaF，變為Cu、In及NaF三元共蒸鍍以形成含鈉之Cu-In前驅物。NaF是在前驅物薄膜上層的部分，且製備了0, 5, 10, 15 nm四種NaF不同厚度。另一方面，Cu及In的總厚度分別是360與440 nm，也就是Cu/In比為1.8。在完成前驅物製備之後，立即在同一個腔體中進行硫化以成長含鈉之CuInS2薄膜。最後，將討論摻雜鈉後對CuInS2薄膜特性的影響。
接著，對含鈉之CuInS2薄膜做一系列的分析。鈉的添加增強了(112)的優選方位，這也指出了鈉的存在可使晶體結構更好。利用SIMS縱深分析觀察各元素成分在薄膜內的分布，其中以鈉的分布為觀察的重點。晶粒尺寸也發現會隨著鈉濃度的增加而變小。利用HRTEM觀察薄膜的微結構。拉曼光譜中顯示存在有一種次要的CIS CA的振動模式，且強度隨著鈉濃度而增加，而主要的CIS CH振動模式的拉曼位移也因此出現了藍移的現象。電性方面，鈉的添加使薄膜的電阻率下降及電洞載子濃度上升。光學吸收係數則隨著鈉濃度增加而下降，在此粗糙度及晶粒尺寸對於光學吸收係數的影響有一個比較，同時，薄膜能隙大小在文中也有討論。最後，在眾多分析中似乎皆存在著一個臨界的鈉濃度，使鈉摻雜後的反應開始發生。

The addition of Na has been found to be an important factor that affects the performance of CI(G)S solar cells. While most of study focus on the addition of Na into CuInGaSe2 thin films, there are much less research for CuInS2 about Na doping.
So, this study examines the addition of Na into CuInS2 (CIS) thin films. Moreover, an alternative approach has been used to incorporate Na into CIS thin films. Two source thermal co-evaporation (Cu and In) was first performed to obtain Cu-In layers. And three source thermal co-evaporation (Cu, In and NaF) then followed subsequently to produce Na-doped Cu-In precursor films having different Na concentrations. The NaF is in the upper part of precursor films with different thickness of 0, 5, 10, 15-nm. On the other hand, the thicknesses of Cu and In are 360nm and 440nm at all of samples, separately. And the Cu/In ratio is 1.8. After thermal co-evaporation, the precursor films were immediately sulfurized in the same evaporation champer to form Na-doped CuInS2 thin films. Effects of Na on the characteristics of the CIS are addressed and discussed.
Then, a series of investigations for Na-doped CuInS2 thin films have been achieved. The (112) preferred orientation was enhanced by addition of Na, indicating a better crystalline structure with Na doping. The elemental distribution along the film thickness was examined by SIMS depth profile. The grain sizes of CIS thin films were found to decrease because of Na doping. The microstructures of thin films were investigated by HRTEM. Raman spectra show the existence of a minor CIS CA mode, and the intensity of the CA mode in general increases with Na concentration. And blue shift of the CIS Raman CH mode occurs as a result. The doping of Na was also found to reduce the film resistivity (increase the film conductivity) and increase the hole concentration in the films. The absorption coefficient was found to decrease with Na concentration due to the effect of roughness and grain size. The energy band gap was also investigated in the article. Finally, there seems to be a threshold concentration for the effect of Na to occur.

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