在本論文中，我們利用分子束磊晶法成長及研製兩種磷化銦材料系列之異質結構場效電晶體，為穫得良好之高溫操作特性，我們在製作閘極電極時依序蒸鍍上白金及金兩種金屬，白金用以防止金在高溫操作時擴散至蕭特基層而破壞其蕭特基特性，而金則用以減少閘極之串聯電阻效應；同時，為使閘極掘入更為精確及穩定，我們使用具有高選擇性之琥珀酸調和溶液以提昇元件良率。為更進一步穫得較大之功率增益及頻寬，我們使用深紫外線光罩微影系統來製作次微米閘極之場效電晶體；實驗數據顯示，所研製之元件具有良好之直流、微波及高溫操作特性，因此適合應用於高速和高功率電路中。

　　首先，我們探討具有單平面摻雜層之砷化銦鎵/砷化銦鋁/砷化鎵變晶性高電子移動率場效電晶體，我們利用高銦含量之砷化銦鎵材料為傳導層，以穫得良好的傳輸特性；此外，單平面摻雜層之設計，不僅可以降低雜質散射之影響，亦可使通道具備較佳之載子侷限力。

　　其次，我們探討具有更高銦含量通道層之雙平面摻雜層砷化銦鎵/砷化銦鋁/砷化鎵變晶性高電子移動率場效電晶體，結構中，雙平面摻雜層之設計不僅提昇了電流密度，亦使得通道層內之載子分佈更為均勻，進而穫得更為寬廣的汲極電流操作區間；此外，較厚的蕭特基層可以用來抑制元件之閘極漏電流的產生。

　　最後，我們利用以上兩種結構製作具次微米閘極之變晶性高電子移動率場效電晶體，藉由結構參數的改變來比較其輸出電性之差異；此外，由於閘極長度之縮減，元件在直流及微波特性上都有較佳之表現。

　In this thesis, two InP-based heterostructure field-effect transistors (HFETs), grown by molecular beam epitaxy (MBE) system, have been fabricated and investigated. We evaporated platinum and gold as Schottky contact metals to obtain high-temperature performance. In addition, the highly selective succinic PH-adjusted solution is used to make recessed gate more precise and stable to increase device yield. For obtaining more power gain and bandwidth of transistors, we also fabricate sub-micron meter gate devices with resorting to deep ultraviolet (UV) photolithography. Experimentally, the devices show good DC, RF, and high-temperature characteristics. These advantages suggest that the studied devices are suitable for high-speed and high-power integrated circuit applications.

　First, we study InGaAs/InAlAs/GaAs metamorphic high electron mobility transistor. With high indium content in InGaAs channel layer, we obtain good transport property. Moreover, by employing the single d-doped sheet, it not only decreases the impurity scattering, but also increases the ability of carrier confinement.

　Second, we report InGaAs/InAlAs/GaAs metamorphic high electron mobility transistor with higher In mole fraction of InGaAs channel than that in first structure. Based on the use of double d-doped sheets, the current density and uniform distribution of carriers in channel layer are improved. Therefore, the device with wide drain current operation regime is obtained. In addition, due to the use of thicker Schottky layer, the gate leakage current can be decreased.

　Finally, the above structures are used to fabricate as sub-micron meter gate MHEMT. We discuss the differences between these two structures. Due to the reduction of gate length, both devices show good DC and microwave performances.

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