在本論文中，我們利用有機金屬化學氣相沉積系統成長出Ⅲ-Ⅴ族氮化鎵太陽能電池。在製程的過程中，我們利用AFM來對我們氮化鎵太陽能電池表面進行分析。我們在ICP參數中添加BCl3，流量20sccm下成功的將粗糙度由58.2nm降低至5.54nm。我們使用鎳/金(5nm/10nm)作為p型電極以及鈦/鋁/鎳/金(15nm/220nm/40nm/50nm)作為n型電極。嘗試不同的回火條件，得到的p型n型最佳特徵電阻值分別是：2.2×10-3 Ω ．cm-2跟 2.47x10-5 Ω ．cm-2。
在後續的p-i-n結構研究中，我們嘗試了不同的本質層做出三種大小為1x1um2的試片。我們使用了X光繞射分析儀及光致發光分析三種不同本質層的試片。在X光繞射分析儀中，我們可以推算在A、B及C試片中的銦含量分別為11.15 % 、10.11 % 及 6.43 %。
在電特性的分析，我們發現本質層全為氮化銦鎵漸變層有最佳的特性。其填充因子在A、B及C試片中分別為44.95%、55.7% 跟 64.75%。
為了要觀察電極圖案對太陽能特性的影響，我們設計了兩組不同的電極圖案。其中不管是改變柵狀電極的根數或寬度或電極相對吸光面積的比例，我們發現有指叉狀電極的元件特性在短路電流密度以及效率皆會優於沒指叉電極的元件，且隨著柵狀電極的根數或寬度或電極相對吸光面積的比例增加，元件特性會更佳，但在填充因子以及開路電壓裡則無明顯的影響。此外我們也成功的做出較大面積3x3um2的InGaN太陽能電池在A、B、C三種試片上，在本質層全為漸變層的C試片，我們得到最佳效率為0.38%。

In this thesis, all samples used were grown by metal organic chemical vapor deposition system (MOCVD). In order to get the optimal fabricationparameter, we try many different parameters. First, We decreased the
roughness from 58.2nm to 5.54nm successfully by insert BCl3 into inductive coupled plasma system (ICP). We also found optimal specific contact resistance for n contact and p contact were 2.47x10-5 Ω ．cm-2 and 2.2×10-3
Ω ．cm-2 , respectively.
In the lately study, three samples with different
i-InGaN layer’s growth condition were prepared. The i-InGaN layer properties could be also analyzed by photoluminescence system (PL) and X-ray diffraction system (XRD). From electrical analysis, we found that when the i-layer replaced for grading layer, its devices performance was the best among all other samples. It was found that the fill factor of my three samples are around 44.95%, 55.7% and 64.75%, respectively.
In order to realize the influence of inter-digitated contact on nitride-based solar cells, we designed two series patterns. First situation of different finger numbers and finger width, we found that the device
performance of contact with inter-digitated was better than contact without inter-digitated. With more finger numbers and larger finger width, better device performance was obtained. Second situation of different contact to
mesa area ratio and finger width, we found that the device performance with dense ratio was better than few ratio. Short current density with and without inter-digitated contact of sample A was about 0.46 and 0.32 mA/cm2 ,
respectively. Open voltage and fill factor of sample A were independent of inter-digitated contact. Efficiency with and without inter-digitated contact of sample A was about 0.235% and 0.175%. Short current density with and
without inter-digitated contact of sample B was about 0.48 and 0.325 mA/cm2 , respectively. Efficiency with and without inter-digitated contact of sample B was about 0.31% and 0.15%. We also found the device
performance of sample B was better than sample A due to the InGaN grading layer. So far, no other research group have done larger size III-nitride solar cell, according to the dislocation and defect in the epitaxy
process. We have tried to fabricate larger size 3x3 um2 solar cell, and do the measurement.

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