本論文提出以共濺射技術改善薄膜電晶體之介電層及通道層品質，並進行元件電特性量測、分析與可靠度之研究。
本研究主要分為三部分，第一部分為研製氧化鋁鉿(HfxAl1-xO)介電層搭配氧化銦鎵鋅薄膜電晶體，觀察不同比例之鋁對其特性影響。第二部分為研製鈦摻雜氧化銦鎵鋅(Ti-doped IGZO)，同樣以共濺射技術來調變鈦含量，並觀測其不同比例下之電特性。為進一步提升元件特性，本論文亦討論以共濺射製程技術製備之氧化鋁鉿介電層與鈦摻雜氧化銦鎵鋅通道層於單一退火條件下，有無沉積後退火對電特性的影響。第三部分為本論文核心，旨為觀測鋁於氧化鉿及鈦於氧化銦鎵鋅之效益，探討各項可靠度變化。
於本論文第一部分，實驗上以共濺射法共靶氧化鉿及氧化鋁，固定氧化鉿濺射功率，藉由調變氧化鋁之濺射功率來改變鋁含量。基於高介電材料為高缺陷密度材料，需配合高溫退火改善其特性，本研究採用三元材料氧化鋁鉿擁有較高熱穩定度抗抵晶相形成的優勢。材料分析顯示Hf0.88Al0.12O擁有較低表面粗糙度(surface roughness)及氧空缺含量，再由J-V特性分析得知擁有極低漏電流。綜觀各項薄膜材料分析，Hf0.88Al0.12O應為最適化比例。於TFT方面，亦發現Hf0.88Al0.12O/IGZO TFT展現最佳的電特性，於氧氣環境下進行600 oC熱退火10分鐘後，其元件電流開關比為6.82×107、次臨界擺幅為108 mV/dec、載子移動率為18.06 cm2/V∙s、界面缺陷密度為1.75×1012 cm-2eV-1。
於本論文第二部分，為了解決氧化銦鎵鋅高缺陷密度的難題，選用低電負度(即高功函數)的鈦元素摻入氧化銦鎵鋅抑制氧空缺生成，優化氧化銦鎵鋅其界面及薄膜品質。根據實驗結果顯示，鈦可捕捉游離氧以填補薄膜的氧空缺，有效修補界面缺陷使閘極控制力再次提升，並減輕界面缺陷對載子移動時的干擾，其漏電隨類施體能階密度減少而降低。於氮氣環境下進行300 oC熱退火10分鐘後，Hf0.88Al0.12O/Ti(2.0%)-IGZO TFT展現最佳的電特性，其元件電流開關比為3.26×108、次臨界擺幅為86 mV/dec、載子移動率為28.63 cm2/V∙s、界面缺陷密度為9.27×1011 cm-2eV-1。
於本論文第三部分，選用前兩部分研究所得之最佳參數，探討有無鋁之氧化鉿及有無鈦之氧化銦鎵鋅於薄膜電晶體電特性與可靠度之影響。選用最適化參數製備之HfO2/IGZO、Hf0.88Al0.12O/IGZO、Hf0.88Al0.12O /Ti(2.0 %)-IGZO TFT，分別命名為元件A、B與C，進行遲滯、正負偏壓應力、加熱及照光作用下的可靠度分析，再藉由低頻雜訊量測觀察其界面品質優劣。由實驗結果得知摻入鋁之氧化鉿擁有較低界面缺陷密度及較高薄膜品質，而摻入鈦於氧化銦鎵鋅有效改善薄膜及界面品質，因此Hf0.88Al0.12O /Ti(2.0 %)-IGZO TFT於各項可靠度分析下，皆展現最小臨界電壓偏移量。上述三個部分之實驗結果已達成本論文優化薄膜電晶體之元件電特性與可靠度之標的。
本論文成功以共濺射製備鋁摻雜氧化鉿介電層及鈦摻雜氧化銦鎵鋅通道層，並應用於薄膜電晶體改善其漏電流、閘極控制能力與元件可靠度，此材料系統具備高驅動及低功耗等優良特性，於平面顯示器產業中具高度發展潛力。

In this work, thin-film transistor (TFT) with Ti-IGZO channel layer and HfxAl1-xO gate dielectric is proposed to improve device performances and reliability. Experimental results reveal that, among three types of HfO2/IGZO, Hf1-xAlxO/IGZO, and Hf1-xAlxO/Ti-IGZO based TFTs, the Hf0.88Al0.12O/Ti(2.0%)-IGZO TFT could exhibit the best device performances with the subthreshold swing of 86 mV/dec, field effect mobility of 28.63 cm2/V∙s, on/off current ratio of 3.26×108. Especially, it shows a threshold voltage shift after 1000s positive/negative gate bias stress/white light illumination of 0.134 V/-0.089 V/-0.195 V, and as compared with the HfO2/IGZO TFT which has corresponding values of 0.612 V/-0.507 V/-0.657 V. The remarkable improvements are attributed to the Al incorporation could reduce oxygen vacancies and improve surface roughness of HfO2 to suppress surface scattering and the amount of charge trapping during the stress test as well as Ti incorporation reduces defect density in the channel layer.

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