中文摘要

本實驗是首先利用離子佈值將銦離子以130keV的能量打入(100)矽基板中，接著再佈值氮離子兩次，分別為30keV與50keV。佈值完以後再對試片作後續退火處理，退火溫度的選擇有600oC，800oC，1000oC，時間的選擇則是一小時與十小時。另外尚有部份試片採用RTA退火兩分鐘。整個實驗的主要目的是為了形成氮化銦量子點，並由於周遭矽基板的晶格壓迫與侷限，使產生的氮化銦量子點為閃鋅礦(zinc blende)結構。
在分析方面主要運用TEM技術了解其微結構，包括缺陷與量子點的型態與分布範圍，大小。以及利用繞射圖譜了解所產生的氮化銦結構，搭配以XPS確認氮化銦化合物的產生。並利用SIMS知道氮，銦元素在材料內的分布情形。最後則是以Micro-PL探討氮化銦量子點的能隙發光能量，並與之前的理論計算作一比對。
實驗的結果我們成功製作出閃鋅礦的氮化銦，沒有纖鋅礦結構(wurtzite)的氮化銦形成，且在試片的淺層處仍有缺陷產生。至於發光能量則約在1eV以下。

Abstract

Sequential ion implantations of In+ and N+ ions were performed on silicon (100). The energy of indium ions was fixed at 130keV, but N+ ions had two different energies, 30keV and 100keV. After the implantation some specimens were furnace annealed in NH3 atmosphere with different time (1hr and 10hrs) and temperatures (600oC, 800oC, 1000oC). Among them, some specimens were additionally further annealed by RTA method at 1050oC for two minutes.
Our main purpose was to form the indium nitride quantum dots in silicon matrix and we expected them to be of zinc blende type which was thermodynamically instable because of the surrounded silicon.
First we took TEM images to know the dot microstructure of dots, including the defects surrounded, distribution, and size. Then we judged whether the dots were of zinc blende type or not by diffraction pattern. We also utilized XPS technique to confirm the existence of indium-nitrogen bonding. In the end, micro-PL measurements were taken to detect the light energy emitted by dots in order to gain knowledge about the band gap of indium nitride.
The results showed that we successfully fabricated zinc blende indium nitride quantum dots, and no wurtzite indium nitride dots were formed. However, there were still some defects near surface due to ion implantations. As for the emission light energy, it was below 1eV.

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