本論文我們利用實驗配合理論模擬，探討不同射極突出部厚度與長度對磷化銦鎵/砷化鎵異質接面雙極性電晶體效能之影響。本文中發現，習知表面通道仍存在於射極突出部與基極金屬電極層間之裸露基極層區域之表面，而且，不適當的突出部厚度將造成嚴重的表面復合現象於突出部側壁與基極金屬電極層介面間。此外，於此表面通道內，電子濃度與復合速率將隨突出部長度增加而減少；然而，長度若過長，將衍生元件面積與介面電容增加，不利於元件集積化與高頻之特性。相反之，此長度若過短，將無法有效抑制表面復合電流。所以適當之突出部厚度與長度對於抑制表面復合現象是一個值得探討的問題。從實驗與模擬結果中發現，磷化銦鎵/砷化鎵異質接面雙極性電晶體之最佳射極突出部厚度介於100-200 埃之間。當突出部厚度介於100-200 埃之間，元件具有最好的電晶體特性、最小的表面通道復合速率、最小的基極電流與最少的電子注入表面通道效應等優點。另一方面，當突出部長度大於0.8 μm以上時，在表面通道內之復合速率可被忽略，且元件具有一較佳直流特性與可接受之高頻性能，故磷化銦鎵/砷化鎵異質接面雙極性電晶體之最佳射極突出部長度為0.8 μm附近。
接著本文係提供一種具有共形結構之異質接面雙極性電晶體及其製造方法，主要係於 (1) 帽層/射極之側壁、(2) 射極突出部表面、(3) 介於射極突出部與基極金屬電極層間之裸露基極表面、(4) 基極金屬電極層與半導體介面分別導入一硫化保護層，來解決突出部長度與厚度不易控制、裸露基極表面區域之表面通道衍生缺失以及基極金屬電極層接觸不佳等習知缺失。最後，在本文中，將提供一個全面性表面硫化披覆方式之異質接面雙極性電晶體。不同於一般基極表面硫化，我們除了在射極、基極與集極表面硫化處理外，也於射極側壁與基極側壁進行硫化處理，使得元件能獲得完整的保護層。

In this dissertation, the influences of various emitter-ledge thickness and length on the InGaP/GaAs heterojunction bipolar transistors performance are investigated based on the simulation and experimental data. The undesired surface channel phenomenon at the exposed base surface between the base contact and the emitter ledge is comprehensively analyzed. Moreover, improper thickness of emitter-ledge passivations would cause serious surface recombination at the edge of emitter ledge. In addition, the electron density and recombination rate are decreased with increasing the emitter-ledge length at the surface channel. However, the longer emitter-ledge length increases the base-collector junction area which in turn deteriorates the high frequency performance. Therefore, the thickness and length of emitter ledge are a critical issue and should be carefully considered. From simulated and experimental results, the optimum emitter-ledge thickness of InGaP/GaAs HBT is between 100 and 200 A and the corresponding optimum emitter-ledge length is near 0.8 μm.
The temperature-dependent DC characteristics and RF performance of an InGaP/GaAs HBT with the conformal passivation on base surface are studied and demonstrated. For the conformal passivation, an additional sulfur passivation layer is passivated on (1) the emitter sidewall; (2) the exposed emitter-ledge surface; (3) the exposed base surface between the base contact and the emitter ledge; and (4) the interface between the base contact and the base layer. Therefore, the related problems of emitter-ledge thickness, undesired surface-channel phenomenon of unpassivated base surface, and poor base contact are shown to have improved by using a conformal passivation method successfully.
Finally, the temperature-dependent DC characteristics and microwave performance of InGaP/GaAs HBTs with and without full sulfur treatment are systematically studied and demonstrated. Not only the top surfaces of emitter, base and collector but also the sidewalls of emitter and base are completely passivated by the proposed full sulfur treatment. This technique is significantly different from previous reports since those methods passivated only the exposed base surface.

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