本論文的內容主要是以金屬有機物化學汽相磊晶法(metalorganic vapor phase epitaxy, MOVPE)成長銦鎵氮自組式量子點(self-assembled quantum dots, SAQDs)，應用於相關的光電元件如量子點發光二極體(light-emitting diodes, LEDs)與金屬-半導體-金屬光檢測器(meta-semiconductor-metal photodiodes, MSM PDs)，並分析元件特性。我們以光致激發螢光光譜(photoluminescence, PL)、拉曼光譜(Raman)、掃瞄近場光學顯微鏡(scanning near-field optical microscopy, SNOM)、原子力顯微鏡(atomic force microscopy, AFM)、高解析穿透式電子顯微鏡(high-resolution transmission electron microscopy, HRTEM)分析銦鎵氮奈米結構的光學與結構特性。論文中主要的研究工作分為以下四個部分討論。
　　為了成長奈米級(nanometer scale)的銦鎵氮自組式量子點，我們提供了一個特異的技術於金屬有機物化學汽相磊晶成長過程。引入中斷成長(growth interruption)的方法於銦鎵氮的磊晶程序，也就是使用12秒的中斷成長時間，我們成功得到了半徑25 nm高4.1 nm的奈米尺度的銦鎵氮自組式量子點，而量子點的密度推估為2×1010 cm-2。相反地，未採用此方式則成長出較大且分佈不均勻的三維島狀物(3D islands)。使用中斷成長得到的樣品，與直接成長的樣品比較，其PL有72 meV的巨大藍移(blueshift)，此時量子侷限史塔克效應(quantum-confined Stark effect, QCSE)、銦的含量與量子點的尺寸效應都將影響PL能量峰(energy peak)的移動與半高寬(full widths at half maximum, FWHM)的大小。在變溫拉曼的量測中，E2H是對於雙軸張力(biaxial strain)極為敏感的聲子模(phonon modes)，而銦鎵氮自組式量子點的樣品中E2H藍移3 cm-1，遠超過其他樣品的藍移值(1.7 cm-1和1.6 cm-1)，顯示量子點樣品中的銦鎵氮磊晶層有很強的壓縮應力(compressive stress)存在。
　　以MOVPE與熱退火(thermal annealing)的方法（740C，20分鐘）在銦鎵氮的表面成長直立的自組式奈米針(nanotips)，並且大部分的奈米針位於三維島狀物的上面。而這些奈米針的高度是20 nm，寬度則是1 nm，奈米針局部的密度高達1.6×1013 cm-2。我們也討論這樣的奈米針可能形成的物理機制。
　　我們把DWELL(dots-in-a-well)結構用在氮化鎵的LED當中。HRTEM影像顯示量子阱中的銦鎵氮自組式量子點有3 nm的高度與10 nm的寬度，而銦鎵氮材料的波耳半徑(Bohr radius)是3.6 nm，TEM結果顯示本研究的銦鎵氮自組式量子點尺寸已達量子效應的範圍。在20 mA的直流注入電流作用下，量子點LED與量子阱LED的順向電壓分別為3.1和3.5 V。我們也發現了量子點LED的電致激發螢光光譜(electroluminescence, EL)的能量峰變動對於注入電流是很敏感的。
　　我們製作了一個具有銦鎵氮自組式量子點的MSM光偵測器，並與傳統的銦鎵氮MSM光偵測器做比較。SNOM的結果顯示MSM光偵測器的銦鎵氮自組式量子點對於SNOM光源(457-514 nm)可能有較好的吸收率，說明了量子點的深侷限(deep localization)的效應。量子點光偵測器有較低的暗電流(dark current)且能操作在光源垂直入射的模式下，與其他無量子點結構的傳統MSM光偵測器相比，光電流(photocurrent)與暗電流比例也大了很多。具有量子點的MSM光偵測器與傳統MSM光偵測器的光響應度(responsivity) 作比較，我們發現在短波長(<350 nm)與長波長(>480 nm)的位置都有一個級數(order)的差距，也就是前者比後者光偵測器有較大的光響應度，而在中段波長(390 - 460 nm)的光響應度作比較，則兩者光偵測器的光響應度相差不多。

　　This dissertation includes the growth and characterization of InGaN/GaN self-assembled quantum dots (SAQDs) and related optoelectronic devices (MQD LEDs and MSM PDs with QDs) by metalorganic vapor phase epitaxy (MOVPE). The optical and structural properties of InGaN/GaN nanostructures have been characterized by photoluminescence (PL), Raman, scanning near-field optical microscopy (SNOM), atomic force microscopy (AFM), and high-resolution transmission electron microscopy (HRTEM), respectively. The main work can be devided into the following four parts.
　　First, we provides a novel technique in metalorganic vapor phase epitaxy (MOVPE) for growing nanometer scale InGaN SAQDs. Growth interruption method had been introduced into epitaxial processes of InGaN layers, i.e. with 12-s growth interruption time, we successfully formed InGaN SAQDs with a typical lateral size of 25 nm and an average height of 4.1 nm. The QDs density is estimated to 2×1010 cm-2. In contrast, much larger InGaN 3D islands were obtained without growth interruption procedure. The introduction of growth interruption would result in a PL blueshift as large as 72 meV. Here quantum-confined Stark effect (QCSE), In composition and size effect of QDs can affect photoluminescence (PL) peak energy and PL full widths at half maximum (FWHM). The Raman measurements revealed that a strong biaxial compressive stress existed in InGaN epilayer since the E2H peak of the sample with InGaN SAQDs showed a large blueshift of 3 cm-1. It should be noted that E2H modes in the Raman spectra are used this purpose because it has been proven particularly sensitive to biaxial stress in GaN epifilms.
　　Second, it has been demonstrated that the vertical self-organized nanotips were grown on InGaN film via MOVPE and thermal annealing (740C for 20 min). It was found that typical height of these nanotips is 20 nm with an average width of 1 nm. It was also found that the local density of the vertically grown self-assembled InGaN nanotips could reach 1.6×1013 cm-2, height and width of the nanotips both distributed uniformity. The possible formation mechanism of self-assembled nanotips has been also discussed in this work.
　　Third, the dots-in-a-well (DWELL) structures were applied to nitride-based light-emitting diodes (LEDs). It has been demonstrated that strain-induced InGaN self-assembled quantum dots (QDs) in the well layers of the active region with a typical 3-nm height and 10-nm lateral dimension by high-resolution transmission electron microscopy (HRTEM). Noting that the Bohr radius of InGaN is 3.6 nm, the DWELL strucrture of LED will exhibit obvious quantum effects. With a 20-mA DC injection current, the forward voltage was 3.1 V and 3.5 V for QD LED and conventional multi-quantum well (MQW) LED in the same structure, respectively. It was also found that electroluminescence (EL) peak variation of the LED with DWELL structure is more sensitive to the amount of injection current, as compared with the MQW LEDs.
　　inally, it has been demonstrated that metal-semiconductor-metal (MSM) photodiodes (PDs) with InGaN SAQDs were fabricated and compared with conventional InGaN MSM photodiodes. The SNOM results revealed such InGaN self-organized nanostructures could have better absorption for the near-field light with the wavelength of 457-514 nm. It was found that the InGaN QD photodiode with lower dark current can operate in the normal incidence mode; we could achieve a much larger photocurrent to dark current contrast ratio from MSM photodiodes with nanoscale InGaN SAQDs. It was also found that the measured responsivity of MSM PDs (PD I with QDs and PD III without QDs) approximated to the same in the range of 390 - 460 nm. Furthermore, PD I showed the higher spectral response than PD III at wavelength < 350 nm and > 480 nm.

Chapter 1
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Chapter 2
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Chapter 3
[1] Y. Narukawa, Y. Kawakami, M. Funato, Sz. Fujita, S. Fujita, and S. Nakamura, “Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm,” Appl. Phys. Lett., vol. 70, pp. 981-983, 1997.
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Chapter 4
[1] S. Nakamura, T. Mukai, and M. Senoh, “High-brightness InGaN/AlGaN double-heterostructure blue-green-light-emitting diodes,” J. Appl. Phys., vol. 76, no. 12, pp. 8189-8191, Dec. 1994.
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Chapter 5
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[3] F. A. Ponce and D. P. Bour, “Nitride-based semiconductors for blue and green light-emitting devices,” Nature, vol. 386, pp. 351-359, 1997.
[4] I. Akasaki and H. Amano, “Progress and prospect of group-III nitride semiconductors,” J. Cryst. Growth, vol. 175-176, pp. 29-36, 1997.
[5] S. Nakamura, “The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes,” Science, vol. 281, pp. 956-961, 1998.
[6] Y K. Su, S. J. Chang, C. H. Ko, J. F. Chen, W. H. Lan, W. J. Lin, Y. T. Cherng, and J. Webb, “InGaN/GaN light emitting diodes with a p-down structure,” IEEE T. Electron. Dev., vol. 49, no. 8, pp. 1361-1366, 2002.
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Chapter 6
[1] D. V. Kuksenkov, H. Temkin, A. Osinsky, R. Gaska, and M. A. Khan, “Low-frequency noise and performance of GaN p-n junction photodetectors,” J. Appl. Phys., vol. 83, pp. 2142-2146, 1998.
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Chapter 7
[1] L. W. Ji, Y. K. Su, S. J. Chang, L. W. Wu, T. H. Fang, J. F. Chen, T. Y. Tsai, Q. K. Xue and S. C. Chen, “Growth of nanoscale InGaN self-assembled quantum dots,” J. Cryst. Growth, vol. 249, pp. 144-148, Feb. 2003.
[2] L. W. Ji, Y. K. Su, S. J. Chang, L. W. Wu, T. H. Fang, Q. K. Xue, W. C. Lai and Y. Z. Chiou, “A novel method to realize InGaN self-assembled quantum dots by metalorganic chemical vapor deposition,” Mater. Lett., vol. 57, pp. 4218-4221, Sep. 2003.
[3] L. W. Ji, Y. K. Su, S. J. Chang, T. H. Fang, T. C. Wen, and S. C. Hung, “Growth of ultra small self-assembled InGaN nanotips,” J. Cryst. Growth, vol. 263, pp. 63-67, Mar. 2004.
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[8] L. W. Ji, Y. K. Su, S. J. Chang, S. T. Tsai, S. C. Hung, R. W. Chuang, T. H. Fang, and T. Y. Tsai, “Growth of InGaN Self-Assembled Quantum Dots and Their Application to Photodiodes,” J. Vac. Sci. Technol. A, vol. 22, pp. 792-795, May/Jun. 2004.