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研究生: 方宏誠
Fang, Hung-Cheng
論文名稱: 觀察絕緣態Al-Pd-Re準晶中由Mott跳躍傳導轉變到Efors-Shklovskii跳躍傳導的現象
A cross over from Mott hopping conduction to Efors-Shklovskii hopping conduction in insulating Al-Pd-Re quasicrystals
指導教授: 林水田
Lin, Shui-Tien
學位類別: 碩士
Master
系所名稱: 理學院 - 物理學系
Department of Physics
論文出版年: 2002
畢業學年度: 90
語文別: 中文
論文頁數: 49
中文關鍵詞: 準晶
外文關鍵詞: Efors-Shklovskii, hopping, quasicrystal, Mott, AL-Pd-Re
相關次數: 點閱:122下載:1
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  • 結合"軌域負磁阻理論(forward interference)"與"正
    磁阻波函數收縮理論(wave function shrinkage)",我們
    可以將高電阻比絕緣態的Al-Pd-Re準晶在液氦溫度磁阻數
    據擬合的很好。我們並發現:(1)絕緣態的Al-Pd-Re準晶其電阻比r=ρ(4.2K)/ρ(300K)由81至129以上在液氦溫度(1.5K~4.2K)會由Mott的可變程跳躍(VRH)傳導變
    成Efors and Shklovskii VRH傳導;(2)傳導轉變的溫
    度過渡區,隨著電阻比變大而變小,但傳導的轉變溫度隨電阻比增加而昇高,且兩者呈線性關係。

    We are able to explain well the Magnetoresistance of Al-Pd-Re
    quasicrystals(QCs) at helium temperature by means of the forward interference and the wave-function shrinkage theories. We also found : (1)there is a cross over from Mott VRH conduction to ES VRH conduction at liquid helium temperature in the Al70Pd22.5Re7.5 QCs with a resistivity ratio
    r=ρ(4.2K)/ρ(300K) ranging from 81 to 129 ; (2) the range of the cross over regime decreases with increasing the sample’s r value and the cross over temperatures are linearly dependent on the sample’s r values.

    摘要 1 誌謝 3 目錄 4 表目錄 5 圖目錄 6 第一章 簡介 9 第二章 實驗儀器與步驟 11 2-1 樣品的製作 11 2-2 準晶電阻與磁阻的量測系 11 2-3 量測磁阻方法 12 第三章 理論 14 3-1 軌域負磁阻理論(orbital magnetoconductivity theory or forward innterference theory) 14 3-2 正磁阻-波函數收縮理論(wave function shrinkage theory) 16 第四章 結果與討論 20 4-1 討論 20 4-1-1 零磁場電導 20 4-1-2 磁阻與磁阻分析 24 4-2 結論 42 參考資料 47

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