於此篇論文，我們利用一點零微米製程技術之n型通道橫向擴散金氧半場效電晶體針對不同閘極氧化層厚度做其特性之探討。
　　文中針對不同閘極氧化層厚度之電晶體探討閘極氧化層厚度對於元件基本特性之影響。並於不同操作溫度下量測元件特性，以討論元件於高溫操作時之特性。最後針對不同閘極氧化層厚度之元件，以高於操作電壓之條件使其加速退化，用以討論不同閘極氧化層厚度之退化行為，並得出厚閘極氧化層之元件其最大退化隨閘極電壓之增加而增加；而薄閘極氧化層元件之最大退化則發生於最大基極電流之閘極電壓。

　　In this thesis, the characteristics of Lateral Diffused Metal-Oxide-Semi- conductor (LDMOS) field effect transistors based on 1.0μm technology with different gate oxide thickness are investigated.
　　The characteristics of LDMOS transistors with different gate oxide thicknesses are examined. The temperature dependence of device parameters is studied under elevated operating temperature. Constant voltage stress is performed on devices with different gate oxide thickness to see the impact of gate oxide thickness on parameter degradation. Different degradation behavior was found that the maximum degradation of thick gate oxide device increases with gate stress voltage. While in thin gate oxide device, the maximum degradation remains at peak substrate current condition.

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