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研究生: 許哲睿
Xu, Zhe-Rui
論文名稱: 分子間極化子對於有機半導體之磁電導效應
Magneto Conductance Response of Intermolecular Polaron Pairs in Organic Diodes
指導教授: 郭宗枋
Guo, Tzung-Fang
學位類別: 碩士
Master
系所名稱: 理學院 - 光電科學與工程學系
Department of Photonics
論文出版年: 2013
畢業學年度: 101
語文別: 中文
論文頁數: 110
中文關鍵詞: 磁電導五環素富勒烯C60極化子對電荷轉移複合態
外文關鍵詞: magnetoconductance, pentacene, C60, polaron pair, charge transfer complex
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  • 本論文主要探討有機五環素摻混富勒烯C60元件之光電流磁電導效應。磁電導效應與激發態濃度有相對關係,因此藉由改變摻混富勒烯C60的濃度、變換陰極功函數、施外加偏壓來控制元件中激發態的濃度高低,並利用元件結構的不同來討論分子間電場方向,來分析激發態濃度會影響到磁電導效應大小。另外在外加電場的作用下同時也發現磁電導效應圖形會有寬窄的改變,推測是電場大小影響了電荷轉移複合態(CT Complex)的電子電洞之距離,導致電荷轉移複合態的交換偶合作用力不同,因此磁電導效應會有變寬窄的變化。針對此磁電導寬窄的改變,我們試著用經驗公式來說明磁電導寬窄的變化。由上述結果中,我們認為激發態的濃度與距離是影響磁電導效應的關鍵,因此提出理論機制並驗證。

    We investigate the magnetoconductances (MC) under illuminaion in pentacene blend fullerene C60 organic diodes. The MC is correlated to the concentration of the excited states. We control the concentration of excited state by blending C60 into pentacene, changing cathode material, applying bias voltage, and using double layers structure. By applying bias voltage, the negative MC is increased, and positive MC substantially broadens. We suggest that the broadened positive MC response depends on the e-h distance of charge transfer complex (CT Complex). To analysis the width of the MC curves , we ues an empirical formula to fit the MC curves at various bias volatges. As results, we show that, in addition to the concentration of excited states, the distance of excited state is also dominate during the formation of the MC.

    摘要 I Abstract II 致謝 III 目錄 IV 圖目錄 VI 表目錄 XIV 第一章 研究領域與實驗動機....................................1 1-0前言-有機半導體 .........................................1 1-1 有機半導體材料的磁場效應研究..... .........................2 1-2 實驗研究動機.................. ........................16 1-3 大綱 ................................................17 第二章 有機磁效應理論機制討論 ................................18 2-0 前言 ................................................18 2-1氫原子模型自旋相依量子效應................................18 2-1-a 自旋軌道偶合作用 (Spin-orbital coupling).............19 2-1-b 超精細結構 (Hyperfine interaction)..................21 2-1-c 黎曼效應 (Zeeman effect)...........................23 2-1-d 交換偶合作用力 (Exchange interaction)...............25 2-2有機磁電導效應.........................................27 2-2-a 有機材料的分子內與分子間激發態.........................28 2-2-b 系統間轉移(Intersystem crossing, ISC)...............29 2-2-c 電子、電洞對的分離能力 (Dissociation ability).........32 2-2-d 三重態激發子與載子交互作用(Triplet-charge reaction) 33 2-2-e 激發態能量轉換路徑...................................34 2-3 結論.................................................37 第三章 實驗製作流程與量測分析方法.............................39 3-0 有機半導體元件製程.....................................39 3-1 ITO導電玻璃基板的製備..................................40 3-1-a 基板切割...........................................40 3-1-b 基板清洗...........................................40 3-1-c 黃光顯影(Photolithography).........................40 3-2 有機半導體元件的製備要點................................44 3-2-a 基板的清洗..........................................44 3-2-b 陽極 PEDOT:PSS的製程................................44 3-2-c 主動層Pentacene與C60的製程...........................45 3-2-d 陰極 LiF/Al的製程...................................48 3-3 有機半導體元件的量測與分析...............................49 3-3-a 有機元件的封裝.......................................49 3-3-b 磁效應量測儀器的架設..................................51 3-3-c 元件的電性與磁性的量測與分析...........................54 3-3-d 訊號處理............................................55 3-4 結論.................................................57 第四章 有機五環素與[60]富勒烯的元件磁電導效應...................58 4-0 前言.................................................58 4-1 Pentacene與C60元件的基本特性............................59 4-1-a 元件的電場量測特性....................................59 4-1-b 元件的磁場量測特性....................................61 4-1-c外加偏壓對Pentacene:C60磁電導效應的影響..................63 4-1-d單層Pentacene光電流磁電導組成的解析......................65 4-2討論單層pentacene與C60的光電流磁電導生成機制................67 4-2-a 論單層Pentacene的正負磁電導效應........................67 4-2-b 論單層C60的正磁電導效應................................71 4-3驗證Triplet poloron pairs對負磁電導的物理機制..............72 4-3-a論改變Interfacial electric field對負磁電導影響..........72 4-3-b論改變Built-in potential對負磁電導的影響................76 4-3-c論元件為雙層(Double layers)結構對負磁電導的影響...........81 4-4 Charge transfer complex對光電流磁電導圖形寬窄變化的物理機制.84 4-4-a論改變Built-in potential對磁電導圖形寬窄變化的影響........87 4-4-b論改變Charge transfer complex濃度對於磁電導寬窄變化.......91 4-4-c論元件為雙層(Double layers)結構對磁電導B0值的影響.........97 4-5 結論.................................................100 第五章 結論與未來展望.......................................101 5-1 結論.................................................101 5-2 未來展望..............................................102 參考資料..................................................106

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