氧化鋅是一種寬能隙(3.4eV)半導體，且其在常溫下具有較大的激子束縛能(60meV)，在光電產業上提供了另一項選擇。
由於p型氧化鋅較難形成，故我們以金屬-絕緣層-半導體結構取代常見的p-n接面型式的二極體，且本實驗也以較易的方式形成絕緣層。在實驗中我們以Sapphire做為我們的基板，利用射頻磁控濺鍍法成長我們的氧化鋅薄膜，由於氧化鋅薄膜本質上較偏向n型，所以我們利用雙氧水法來使我們的氧化鋅薄膜呈現絕緣性。將試片置於30%的雙氧水溶液中，使其表面與雙氧水反應呈絕緣性，以熱蒸鍍的方式鍍上我們的金電極，使其成為金屬-絕緣層-半導體結構，而未反應的氧化鋅薄膜我們鍍上鋁電極形成歐姆接觸，以HP4156量測其電性。

ZnO is a wide band-gap semiconductor and it has larger Exciton binding energy at room temperature. So, it provides another choice in optoelectronic applications.
Because of the difficulty in making p-type ZnO, we use MIS structure instead of p-n junction structure. We also use easier method for making our insulator layer. We use Sapphire substrate and ZnO thin film was grown by RF Sputter. Then, we immerse our sample in hydrogen peroxide to be an insulator layer. The third step, Gold Schottky contact was grown by thermal evaporation. A MIS structure is complete. Also, we use aluminum as an Ohmic contact. We can get its I-V curve by HP4156.

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