本論文主要分為兩大部分：第一部份為水熱法製作側向成長氧化鋅奈米線電晶體。利用傳統微影製程作出電極圖形蒸鍍上銀當晶種層和金屬阻擋層後用水熱法層側向成長氧化鋅奈米線，探討銀晶種層厚度的影響和前驅物濃度對於電極上成長之奈米線密度的變化，亦使用負型光阻做為阻擋層以水熱法側向成長氧化鋅奈米線之後，藉此比較不同阻擋層對成長結果之影響。此外也以鋅薄膜作為晶種層，以及比較於鋅薄膜上披覆鈦阻擋層後之成長情形，隨後配合滾壓及熱壓的方式進行元件之製作。
第二部份則為利用焦耳熱改善元件特性之討論。主要是根據同一個串聯電路中若施加一電壓則其電流都相同，又因功率等於電流平方乘以電阻，所以元件中電阻越大的地方其所被施加的功率也越大，功率越大則其所生成的熱也越多，利用其產生之焦耳熱來達到退火的目的，藉此改善元件之特性。在本研究中利用光微影技術製備鋁電極，再利用介電泳方式排列氧化鋅奈米線於電極上，隨後經熱壓處理以降低其接觸電阻，並於不同環境下（氮氣、空氣和epoxy封裝後）在汲極施加偏壓探討其影響，且利用焦耳熱處理的過程中並不會使元件的溫度明顯提升，因此此製程將可在可撓曲基板或塑膠等不耐高溫的基板上進行電晶體製作及特性改善。

There are two main topics in this study. The first part is fabrication of lateral growth of ZnO nanowire transistors using hydrothermal method. First, conventional photolithography process is used to fabricate electrode patterns followed by deposition of silver seed layer and metal inactive layer by e-beam evaporation. Then, the lateral growth of ZnO nanowires is carried out by hydrothermal method. The effects of silver seed layer thickness and the concentration of precursor on the density change of nanowires is studied. The fabrication of electrodes using negative type photoresist as a protection layer was also made by hydrothermal method to grow lateral ZnO nanowires. Therefore, we can compare the effects of protection layer material on growth. In addition, the growth of nanowires is compared between a seed layer made of zinc thin film and a zinc thin film with coated Titanium on top as protection layer, where both methods were followed by roll pressing and hot pressing to fabricate devices.
The second part is focuses on performance improvement using Joule heating. According to the fact that if we apply a voltage then the same current exists in anywhere in a circuit in series where the power is equal to current square multiple by the resistance, when the local resistance increases, the local power increases along with a higher the local power and more local heat; therefore, those heat is being utilized to achieve annealing. Then, we used photolithography technique to fabricate aluminum electrodes followed by aligning ZnO nanowires on Al electrodes by dielectrophoresis method. Improving the contact resistance was done by hot pressing method, and then voltage is applied under different atmosphere and environment (nitrogen, atmosphere, and epoxy protection) to study the effect of annealing. Since the increases in device temperature is not obvious during joule heat treatment, the proposed fabrication process can be used for transistor fabrication and characteristics improvement on non-temperature-tolerant flexible substrates such as plastic.

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