本研究利用單一步驟水熱法合成高密度ZTO奈米線陣列在FTO基板上。HRTEM影像中清楚明顯的條紋和NBDP裡可被標示為屬於菱形六面體ZTO (012)、(104)和(116)面的離散不連續繞射點，都顯示ZTO奈米線具有優異結晶性。從EDS分析得知扭曲的晶格結構肇因於鋅在結構中的不足(鋅:錫=1:3)。
從UV-Vis量測得能隙約為3.7 eV。VB的位置從UPS分析得知，其低於金的功函數約2.7 eV。透過VB和能隙，我們可以推斷得知能帶結構圖，其Ec¬和Ev橫跨氫氣、氧氣及超氧自由基、羥基自由基的氧化還原電位。
在光降解測試中，量得降解反應常數為9.8  10-3/min，代表有著優異的光降解能力。ZTO也同時存在傑出的PEC表現在我們的初步量測中。這些結果符合我們推斷得知的能帶結構圖，證明ZTO奈米線陣列是前景可期的光催化材料在紫外光環境下。

High density ZTO nanowire arrays were grown on FTO substrates through a single step hydrothermal synthesis using the parameters of 0.375mmole of Zn(CH3COO)2·2H2O and SnCl¬4·5H2O, pH of approximately 12.5, and 1.75 g of PEG 4K at 200 C for 12 h. HRTEM images showed distinguished fringes, indicating excellent crystallinity of ZTO nanowires. Multiple discrete spots, indexed at (012), (104), and (116) of rhombohedral-ZTO, were observed in nano-beam diffraction indicating the single crystalline ZTO nanowires. The distorted lattice structure was attributed to Zn deficiency (Zn:Sn = 1:3), which was ascertained from the EDS analysis.
The yielded band gaps of approximately 3.7 eV were obtained through UV-vis spectrometry. The VB position was determined to be approximately 2.7 eV blow the work function of the facility (approximately -4.2 eV of Au) using UPS analysis. The deduced band structure showed the band edge potentials (EC and EV) straddled the hydrogen and oxygen redox potentials and super oxide and hydroxyl radical potentials.
Superior photodegradation ability with the k value of approximately 9.8  10-3/min was observed. The sample also exhibited promising PEC performance from our preliminary studies. These results were consistent with the deduced energy bad diagram, indicating that ZTO nanowire arrays were promising photocatalytic materials in the UV range.

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