本論文主要分成兩個部份討論。在第一部分的研究當中，我們成功的利用一階段傾斜角沉積技術在康寧7059玻璃基板上沉積出非極性ZnO薄膜。SEM結果顯示薄膜表面由長1-2 um，寬200-600 nm的橫向ZnO柱狀結構所組成。TEM橫截面影像及擇區電子繞射結果顯示，薄膜是由許多晶粒從玻璃基板開始堆疊向上發展，隨著成長厚度的增加，[0002]方向晶軸也從原本垂直基板表面逐漸轉向，最後呈現近乎平行基板的狀態。(0002)面極圖分佈隨著傾斜角改變呈現漸進式變化，在傾斜角 = 18°方位角 = 0°時發現有高密度極點分佈。(10-10)極點呈現豆莢狀分布，主要訊號集中在傾斜角 = 3°和30°及方位角 = 90° / 270°處。變角度X光近緣吸收光譜技術結果可以得知ZnO表面柱狀結構具高晶體優選方向性，其局部電子結構也呈現很強的異向性。由極化拉曼光譜結果可知，當極化條件為X(Z,Z)-X時，以378 cm-1 A1 (TO)訊號峰為主，當極化條件為X(Y,Y)-X時，則是438 cm-1 E2 (high) 訊號峰主導。此成長機制可以容易的應用在其他如GaN半導體材料的製備上，且因為無基板選擇性的限制，對於未來在非極性發光元件的發展上無疑是一大優勢。
在第二部分的研究當中，我們利用合金蒸鍍的方式製作出同時包含homologous In2O3(ZnO)m及高In濃度佈值ZnO(In:ZnO)的單一異質接面結構，此結構同時產生強侷限發光特性及高的熱電功率因數。能量過濾二次電子影像呈現了一個特殊明暗對比的層狀結構，與TEM結果互相參照可以得知此異質接面結構在短軸方向為In2O3(ZnO)m / In:ZnO / ZnO / In:ZnO / In2O3(ZnO)m等5層結構排列而成。由CL單光影像結果來看，透過能帶的接合，In:ZnO區域形成類量子井結構侷限電子，產生波長385nm紫外光發光訊號。特別的是，此獨特異質接面結構中，藉由In:ZnO層提供了一個理想的電子傳輸通道提高導電率，且homologous In2O3(ZnO)m層中大量的界面形成多重散射阻礙聲子的傳輸，使其在室溫下具有優異的熱電power factor 為2 x 10−4 Wm-1K-2，高於一般純ZnO奈米線所量到的1.03 x 10−5 Wm-1K-2一個數量級。此次研究展示了一個新的結構概念，藉由組合摻雜層與同源結構到單一結構上，可以將電子與聲子的傳輸路徑分離，使半導體元件同時具有良好的發光及熱電特性。

Non-polar ZnO thin film with high crystal quality is grown on a glass substrate using one-step oblique-angle deposition. Cross-sectional transmission electron microscopy images and selected area electron diffraction patterns reveal that the film is constructed as a stack of grains from the bottom to the top with the [0002] axis gradually titled from a vertical to a horizontal orientation with respect to the substrate. In the second part, we demonstrate the viability of a coupled structure of homologous In2O3(ZnO)m with In-doped ZnO into heterojunction belts synthesized by alloy-evaporation deposition. Energy-filter secondary electron images reveal a five-layer contrast in the width direction corresponding to In2O3(ZnO)m / In:ZnO / ZnO / In:ZnO / In2O3(ZnO)m, as confirmed by transmission electron microscopy analysis. The In:ZnO channels behave like quantum wells through band alignment. This novel heterostructure provides an ideal pathway to enhance electron conduction through the In:ZnO layer, while the homologous In2O3(ZnO)m layer contains numerous interfaces to impede phonon transportation. In this way, the power factor of the heterostructure is greatly enhanced to be 2.07×10−4 Wm-1K-2 at room temperature.

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