此篇論文主要在研究(TixZr80-x)Ni20準晶與非晶的熱電傳輸性質。準晶樣品是用銅模吸鑄法而非晶樣品是用銅滾輪淬熄法所製成。在製作上我們發現對於(TixZr80-x)Ni20隨著x從35的增加，要形成完美非晶所要求的冷卻速率越嚴苛。
這兩種樣品的電阻率於常溫皆在150 μΩ-cm以上，他們的電阻溫度係數皆為負值。電阻率在高溫(50~300K)我們用power-law去擬合，在低溫(30K以下)用弱局域化和電子-電子交互作用來解釋。Ti40Zr40Ni20在低溫下出現超導現象，準晶為1.18K，非晶為2.09K。
準晶與非晶的Seebeck係數皆非常小，室溫時在9μV/K以內，準晶樣品的Seebeck係數大於非晶樣品，並且兩者皆存在著不可忽略的電子-聲子質量加強作用。藉由比較同一成份的準晶與非晶，發現Seebeck係數的線性部分的變化主要歸因於費米面上電子態密度的一階微分，其次才是歸因於電子態密度。
(TixZr80-x)Ni20準晶的熱導係數隨著x從40增加而下降，室溫時約8W/mK 。在10~30K的地方出現一個小高原，這個小高原的強弱和無序與缺陷有關，與x-ray 衍射圖所得出的結果是一致的。

We compared the difference of thermo-electirc properties between the icosahedral phase and amorphous phase of (TixZr80-x)Ni20 alloys. The former was prepared by means of cooper mould suction casting, while the latter prepared by a melt-spun method. We found that the quenching rate for the amorphous phase is higher when x increases from 35.

The resistivity of the studied (TixZr80-x)Ni20 is larger than 150 μ -cm at room temperature, and the temperature coefficient of the resistivity is negative. We fit the resistivity to a power-law in the high temperature region (50~300K), while the weak localization and electric-electric interation in the low temperature region (below 30K). We decided the super-conductive temperature of the icosahedral and amorphous phase, which to be 1.18K and 2.09K respectively in the composition of Ti40Zr40Ni20.

Seebeck coefficient of the investigated samples is very small, lower than 9μV/K at room temperature. The S value of amorphous phase is lager than the icosahedral phase. It also exists an un-ignorable electron-phonon mass enhancement. By comparing the icosahedral and amorphous phases, we found that the contribution to the linear part of the Seebeck coefficient mainly arises from the derivative of the density of states (DOS). The factor of the DOS is less important.

The thermal conductivity of the (TixZr80-x)Ni20 alloys decrease as x increased form 40. It is found to be 8W/mK. We found a plateau in the thermal conductivity of each sample between 10 and 30K. The maximum at low temperature can be reduced by disoreder or defects, or both, consistent with the result of x-ray diffraction pattern.

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