本研究利用反應式磁控濺鍍系統製備不同的氮化鈦、氮化鉭奈米薄膜以及兼具兩者特性的鈦鉭氮三元複合薄膜，並藉由改變薄膜堆疊輔助層與靶材種類等製程參數來討論不同薄膜微結構、相組成、表面形貌對電阻率及電化學性質之影響與關聯性。透過控制添加鈦輔助附著層以及增加背板偏壓使氮化物附著性增加並提升表面平整性及結晶型貌。完成後將這些薄膜以低掠角X光繞射儀分析其微結構與結晶相、掃描式電子顯微鏡觀察表面形貌、結合四點探針、表面粗度儀量測薄膜厚度與電阻率，最後利用恆電位儀與電化學交流阻抗分析儀分析薄膜的電化學性質探討其抗腐蝕特性。
實驗結果顯示薄膜的沉積速率會隨著製程參數的變化而改變，偏壓上升後會使薄膜的緻密性增加但會降低薄膜厚度。薄膜微結構與表面形貌也會隨著偏壓增減而有所變化，此外TiN與TaN在氮氣流量比為10 %時，表現出薄膜繞射波峰強度降低的情況，代表此時的薄膜微結構呈現似非晶的狀態，且在此參數下的薄膜表面形貌也變得非常緻密，非晶的微結構也造成薄膜電阻上升。而結合TiN與TaN的TiTaN三元薄膜，則表現出十分穩定的薄膜微結構，使得薄膜性質與製程參數之間有較線性的變化。電化學交流阻抗結果顯示，TiTa金屬薄膜具有最大的阻抗值，而氮化薄膜則以Ti /TaN此組參數擁有最大的阻抗值，其原因與其薄膜表面形貌和微結構相關。整體而言，多層複合結構會使薄膜電阻上升，相較非晶的薄膜微結構與緻密的表面有助於薄膜抗腐蝕能力的提升。薄膜性質主要受薄膜微結構與表面形貌的影響，而鍍膜的平整性為影響結果之主要因素，並且可根據不同的用途調整適當的參數，在低電阻、高抗腐蝕能力等薄膜性質之間選擇，可以製備出多功能之奈米薄膜。

The good properties of binary transition metal nitride films such as titanium nitride (TiN) and tantalum nitride (TaN) have been attracted. The combination of TiN and TaN is expected to create a multi-functional material. The ternary titanium tantalum nitride films with N2/(Ar+N2) gas flow ratios 10% is deposited the bi-layers structure by dc reactive magnetron co-sputtering on Si (100) substrates and SS316L. The effect of adding adhesive layer on the microstructure, morphology, electrical properties, and electrochemical properties of the Ti, Ta and TiTa nitride films are investigated by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), four-probe method, potentiostatic, and electrochemical impedance spectroscopy, respectively. The microstructure of TiTaN films is more stable than TiN or TaN films. The change of resistivity of films with increasing when metal film becomes nitride film. Then the TiTaN bi-layers exhibited the good corrosion resistance and the SEM image of bi-layers morphology showed smoother. Our studies suggested that the single phase structure is benefit to electrical properties while the amorphous-like structure and denser morphology are benefit to corrosion resistance.

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