在毛細管電泳數值模型中，一般常用來計算溶質在毛細管電泳晶片中的流動，通常使用濃度方程式。但濃度方程式並不能清楚描述不同帶電性質溶質離子之運動現象。本研究使用PIC法及Navier-Stokes方程式以絕對遷移率，描述不同電性之溶質離子，在非水溶液之毛細電泳內運動情形。由模擬結果顯示毛細管壁面電位，將會影響帶電之正負離子在電雙層中運動現象。正離子由於受到壁面負電位的影響，將會被吸引至壁面附近，而負離子因為所帶電性不同，將會被推出電雙層外。且帶正電離子之遷移速度大於帶負電離子，而提早流入分離流道。
在毛細管電泳管道中，幾何外形會造成電滲流速度在管道交會處造成速度損失，因此定義幾何外形因子，計算電滲流在管道交會處之速度損失。此外帶電離子在毛細管電泳中，主要受到電場速度與電滲流速度之影響。本研究定義電滲流場速度與電場速度之比為離子遷移係數。當離子遷移係數大於1時，代表電滲流速度大於電場速度，帶負電離子受到電滲流速度的影響將可流入管道交會處，當離子遷移係數小於1時，代表電場速度大於電滲流速度，由於電場影響，帶負電離子將會停在交會管道出口處。由模擬結果得知：由幾何外形因子及離子遷移率，將可以得知帶負電離子是否可以進入管道交會處。
雙T型毛細管電泳晶片是一種常見的電泳晶片幾何外形設計，雙T型管道間的距離可以控制待測溶液之流量。由模擬果得知:雙T型電泳晶片的各項尺寸及雷諾數將會影響正負帶電離子，在分離流道上的分布狀況。因此本研究找出正負帶電離子、幾何外形及雷諾數之間的關係，來設計符合實驗需求的雙T型毛細管電泳晶片。

Traditional numerical schemes use the concentration diffusion equation to simulate the solute concentration distribution in CZE (Capillary Zone Electrophoresis) systems. However, although this equation adequately describes the diffusion of a solute liquid in such systems, it cannot describe the different motions of the differently charged solute ions. Therefore, this study employs a particle model to simulate solute ionic migration. Using the Navier-Stokes equation and the PIC (Particle in Cell) method, this study examines the absolute mobility of negatively and positively charged ions in non-aqueous solvents in a CZE system. The results show that the zeta potential on the channel wall affects the migration of the positive and negative ions in the electrical double layer (EDL) in different ways. Specifically, the positive ions accumulate at the channel wall, while the negative ions are pushed out of the EDL. Furthermore, it is shown that the positive ions migrate more rapidly than the negative ions in the injection process.
In the current analysis, the reduction in the electroosmotic velocity caused by the geometry change as the injected flow exits the injection channel and enters the cross-section region of the microchannel is quantified using a geometry factor, defined as the ratio of the electroosmotic velocity in the cross-section region of the microchannel to that in the injection channel. Meanwhile, the relationship between the electroosmotic velocity of the charged particles and their ionic velocity is modeled using an ionic migration factor γ. In general, an ionic migration factor of1>γ indicates that the electroosmotic velocity is greater than the ionic velocity, and hence both the positively and the negatively charged ions will migrate into the cross-section region of the microchannel. However, when the ionic migration factor has a value of1<γ, ionic migration of the negatively charged ions into the cross-section will not take place. Accordingly, a series of simulations is performed to identify suitable values of the ionic migratory factor and the Reynolds number which ensure that ions of both charge types can successfully migrate into the cross-section during the injection step of the CZE process.
The double T-type channel is one of most useful geometric form in CZE system. The quantity of test sample can be control by the distances between the two injection channels. However, the distance between two injection channel will causing variation in the electric and electroosmotic field distribution. Accordingly, this study performs a series of simulations to investigate the respective influences of the Reynolds number and the geometric variables of the CZE chip on the electroosmotic and electric field distributions in the intersection region of the chip, and therefore by implication, on the migration tendencies of negatively and positively charged ions during the injection process.

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