本論文中，主要探討一般N型金氧半場效電晶體在不同的受測偏壓下，其熱電洞注入所造成的熱載子可靠度影響，包含降低其閘極受測電壓和增加基板電壓等方式去增強熱電洞的注入情況亦或者使其產生歐傑效應(Auger recombination effect)。
首先，我們將對金氧半場效電晶體的應用範圍以及其優點特色做說明，接著描述其研究之動機，對於不同受測電壓下的熱載子可靠度變化，其主要退化機制的探討和延伸之研究。本論文亦會介紹熱載子可靠度之原理、熱載子可靠度使用之機台以及分析元件特性電腦輔助設計模擬軟體(TCAD)…等，輔助本論文之工具。
基礎介紹之後，我們將呈現元件的量測設定和在基本量測下的電特性結果，其中包括：元件特性曲線ID-VD、線性區電流ID-VG、飽和區電流ID-VG以及基板電流ISub-VG。
有別於以往文獻中提到熱電洞注入會發生閘極受測電壓接近於臨限電壓的情況(VG≈VT)。本研究內容中，主要發現在一般的N型MOSFET中，其在基板電流峰值的偏壓條件下會產生熱電洞注入，且其最嚴重的退化不只會發生在基板電流峰值的偏壓條件，因此除了用量測數據來分析元件在不同偏壓條件下受到的主要退化機制和產生缺陷的區域外，同時使用了電腦輔助設計模擬軟體(TCAD)來分析造成其現象之推論。

In the thesis, we mainly discuss the different stress bias condition and the hot carrier reliability induced by hot holes injection on the N-type conventional metal-oxide-semiconductor transistor. The experiment will enhance the hot holes injection and produce the Auger effect by reducing its stress gate voltage and increase the substrate voltage…etc.
First, the advantages of conventional LV MOSFET and the applications of them were illustrated. And then, we will describe the motivations of the study, the study of the main degradation mechanism and the extension of the hot carrier reliability under different measured voltages. In the thesis, we will also introduce the theory of hot carrier effect, equipment of measurement and technology computer aid design (TCAD) that the tools support our research.
After the introduction, we will present the measurement setup and the basic characteristic results in our devices including ID-VD, ID-VG linear region, ID-VG saturation region and ISub-VG.
Unlike the previous literature, the hot holes injection will happen at stress gate voltage close to the threshold voltage on conventional N-type LV MOSFET. There is hot holes injection when we stress under maximum substrate current condition and the worst degradation not only happen at this condition but also lower gate stress gate voltage. Therefore, the main degradation mechanism and the damage area under the different bias conditions were analyzed by using the measurement data. The computer-aided design simulation software (TCAD) was used to support our thesis at the same time.

Chapter 1

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chapter 2

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chapter 3

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chapter 4

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[4]Tian, Kuen-Shiuan, et al. "An Investigation on Hot-Carrier Reliability and Degradation Index in Lateral Diffused Metal–Oxide–Semiconductor Field-Effect Transistors." Japanese Journal of Applied Physics 47.4S (2008): 2641.