本研究討論氧化銅/砷化鎵薄膜系統奈米壓痕行為，以及退火前後機械性質、表面形貌和微觀結構之變化。本實驗利用射頻濺鍍機於砷化鎵基板上沉積200nm及300nm之氧化銅薄膜，分別對薄膜厚度200nm試片進行150nm和250nm深度之試驗，以及薄膜厚度300nm試片進行150nm和350nm深度之試驗，以了解壓痕深度與膜厚之影響。此外也對另一組試片進行500℃持溫30分鐘之加熱，同樣進行上述之量測，以比較退火前後之差異。
實驗結果顯示，退火前之負載-深度曲線有pop-in之現象，經退火後硬度及楊氏模數皆下降，因此無因薄膜脫落基板而發生pop-in之現象。當壓痕深度皆為150nm時，發現膜厚300nm所量測之硬度與膜厚200nm相差有限，因此可發現薄膜厚度影響整體硬度有限。觀察試片表面形貌及剖面微觀結構可發現，壓痕深度越大表面之變形量與差排密度也越大，當壓痕深度皆為150nm時，膜厚較厚之試片殘留的塑性變形較為明顯，因而有較大之表面變形與差排密度。退火後表面變形與差排密度皆較小。

The mechanical properties of CuO/GaAs thin films with and without annealing indented in room temperatures to different depth were examined by using a nanoindentation test. The specimens were annealed at the temperature 500℃ for 30 minutes. The result show that without annealing the pop-in effect appeared at the load-depth curve as the specimen indented at room temperature, due to the delamination of the thin film from the substrate. After annealing, the load-depth curve become smooth and the hardness and Young’s modulus were found to decrease. Furthermore, dislocations density were also found to decrease dramatically. The changes in microstructure and mechanical properties were also discussed in terms of annealing, indentation depth and thickness of the thin film were also discussed.

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