因立方碳化矽(3C-SiC)其卓越的物理性質，加上較其於碳化矽多型體低廉許多的製造成本，許多文獻表達了正向的態度，認為在不久的將來3C-SiC元件必能實現商業化量產。
本研究使用了非平衡態分子動力學模擬方法，研究了無缺陷之3C-SiC薄膜在不同奈米尺度、溫度下，熱傳導係數受溫度效應以及尺度效應影響之變化，將結果整理成圖表以便觀察其變化趨勢，並基於文獻結果以及理論層面推測出產生變化的可能原因。
另外由於薄膜在生產時由於設備良率或是基板前處理，無可避免的會有缺陷發生，故本研究以隨機抽取欲探討比例之分子的方法模擬了在薄膜有缺陷發生的狀況，透過改變不同缺陷濃度，觀察其熱傳導係數在不同參數設定的條件下，受到尺度效應、溫度效應以及缺陷效應的影響，並且給予這些結果一個可能的原因。
藉由觀察薄膜熱傳導係數的變化，了解3C-SiC薄膜之傳熱行為，並將其與現今主流碳化矽多型體4H-SiC進行了比較，評估3C-SiC取代4H-SiC作為新一代碳化矽元件材料的可能性，研究最後得到非常正向的結果。

Because of the excellent physical properties of cubic silicon carbide (3C-SiC) and its much lower manufacturing cost than silicon carbide polytypes, many documents have expressed a positive attitude and believe that 3C-SiC components will be necessary for the near future, and can achieve commercial mass production.
In this study, a non-equilibrium molecular dynamics simulation method is used to study the changes in the thermal conductivity of the no-defected 3C-SiC film at different nanometer scales and temperatures under the influence of temperature and scale effects. The results are organized into graphs for observation. Based on the results of the literature and theory, the possible reason for the trend of change is inferred.

In addition, due to the equipment yield or substrate pre-processing when producing the film, there will be defections inevitably. Therefore, this study simulates the occurrence of defects in the film by randomly extracting the molecules of the ratio to be explored. For different defect concentrations, the thermal conductivity coefficient affected by the scale effect, temperature effect, and defect effect under the conditions of different parameter settings are observed. These results will be given a possible reason.

By observing the change in the thermal conductivity of the film, this thesis will analyze the heat transfer behaviors of the 3C-SiC film, and it will be compared with the current mainstream silicon carbide polytype 4H-SiC. Furthermore, 3C-SiC will be under evaluation instead of 4H-SiC as a new generation of silicon carbide. The research on the possibility of component materials will be discussed and finally yielded reasonable results.

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