在本論文中，我們研究了兩個世代的太陽能電池，分別為異質接面（Heterojunction with Intrinsic Thin-layer, HIT）太陽能電池與鈍化射極與背電極（Passivated Emitter and Rear Contact, PERC）太陽電池之關鍵製程技術，並透過電子顯微鏡影像、有效少數載子壽命、表面分析及元件缺陷密度等分析討論來剖析製程的關鍵因子。
首先，針對 HIT solar cells 的製程前處理關鍵製程技術，透過無使用 IPA的晶圓表面紋理化製程方法達到了高金字塔覆蓋(>95%)且低平均反射率(11.3%)的金字塔結構，並且為了優良的鍍膜階梯覆蓋率，增加化學酸拋光的金字塔圓潤化製程，最終透過高潔淨的清洗製程技術達到有效少數載子壽命為 2166.00μs之矽晶圓基板。
接著，在 PERC solar cells 的關鍵製程技術發展上，透過了自主開發的電漿輔助原子層沉積（Plasma Enhanced Atomic Layer Deposition, PEALD）設備來沉積 太陽能鈍化層薄膜材料 - 氧化鋁（ Al2O3 ） 薄 膜 ， 使 用 了 三 甲 基 鋁（Trimethylaluminium, TMA, Al(CH3)3）及水氣（H2O）作為前驅物。Al2O3薄膜在大氣中進行後退火製程，溫度控制在 200-500 ℃之間，並搭配了超高頻 VHF（40.68 MHz） 的電漿輔助化學氣相沉積（Plasma Enhanced Chemical Vapor Deposition, PECVD）設備沉積 SiNx 薄膜製作 PERC 電池， 最終驗證其光電轉換效率達 21.54%。
最後以自主開發之非真空原子層沉積設備(Atmospheric Pressure Atomic Layer Deposition, APALD)設備沉積 Al2O3 薄膜搭配微波後退火技術，透過短時間的微波後退火製程提升其鈍化特性，比較未退火與微波退火溫度調控在 200-500 ℃之樣品，APALD 非真空沉積薄膜擁有較高的薄膜沉積率，可提高生產速率，降低真空設備投入的成本。由於微波在過程中會有較大的穿透深度發生，提供晶圓內的體積平均受熱，與傳統退火相比可達到快速退火之功效，從QSSPC 分析可知，有效載子生命週期在微波退火 400 ℃僅 5 分鐘，其 τeff 可達到 2925.03μs。透過非真空設備快速沉積薄膜及超快退火製程方法達到更具商業化發展的可能性。
本研究提供了太陽能電池在設備與製程上的發展參考，透過分析討論兩個世代的太陽能電池元件，並以貼近商業化製程的角度開發設備與設計製程實驗，希望能為太陽能技術發展增加助益，期盼有朝一日太陽能發電能夠更加地發光發熱。

In this thesis, we studied the key process technologies of heterojunction with intrinsic thin-layer (HIT) and passivated emitter and rear contact (PERC) solar cells through electron microscopy images, effective minority carrier lifetime, surface analysis, and component defect density to analyze the key factors of the process.
In the key pre-processing technology of HIT solar cells, the wafer surface texturing process method without isopropyl alcohol achieved a pyramid structure with high pyramid coverage (>95%) and low average reflectivity (11.3%). In addition, the pyramid rounding process of chemical acid polishing was added to achieve an excellent step coverage of the coating. Finally, a silicon wafer substrate with an effective minority carrier lifetime (τeff) of 2166.00 μs was achieved through a high cleaning process.
In the key process technology of PERC solar cells, the Al2O3 film was deposited through the self-developed plasma-enhanced atomic layer deposition equipment using trimethyl aluminum and water vapor as the precursors. The Al2O3 film underwent a post-annealing process, in which temperature was controlled between 200 and 500 °C in the atmosphere, and plasma-enhanced chemical vapor deposition equipment in very-high frequency mode (40.68 MHz) was used to deposit SiNx film to make PERC cells, and its photoelectric conversion efficiency reached 21.54%. Finally, the self-developed atmospheric pressure atomic layer deposition (APALD) equipment was used to deposit Al2O3 thin film with microwave post-annealing technology, and the passivation characteristics were improved through a short-time microwave post-annealing process. A comparison of the unannealed samples were compared with the samples annealed in microwave at 200–500 °C showed that APALD non-vacuum-deposited film can be realized with a higher film deposition rate, which can increase the production rate and reduce the cost of vacuum equipment investment. The microwave has a greater penetration depth during the process; thus, the resultant thermal energy provided can be spread out evenly to the entire wafer, and rapid annealing can be achieved. The results of quasi-steady-state photoconductance analysis showed that the effective carrier lifetime was only 5 min after microwave annealing at 400 ℃, and its τeff can reach 2925.03 μs. The non-vacuum equipment rapid deposition of thin films and ultra-fast annealing methods can be used to achieve more commercial development possibilities.
This investigation provides a reference for the development of solar cells in equipment and manufacturing processes. The results of the analysis of the solar cell components of the two generations may be used to develop equipment and design process experiments for commercial processes, which is expected to promote the development of solar energy technology. We look forward to the day when solar power generation can become more radiant.

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