本論文包含兩個部份，首先是根據有限差分光束傳播法 (Finite Difference Beam Propagation Methods, FD-BPM) 以及光阻曝光顯影理論建立光阻曝光與顯影過程的模擬方法。光阻的顯影速率是由光活性化合物 (Photoactive Compound, PAC) 的濃度決定，在紫外 (Ultraviolet, UV) 光曝光過程中，光阻的 PAC濃度會隨吸收的曝光劑量變化，同時改變光阻的吸收率與折射率。本研究通過量測擬合取得光阻曝光參數以及顯影速率模型，根據光阻內隨曝光變化的吸收率與折射率分佈，由有限差分光束傳播法計算UV光在光阻層中的傳播，得到曝光後內部的PAC濃度分佈，並根據顯影速率模型轉換為顯影速率分佈。目的為得到厚型光阻曝光過程中更精準的曝光劑量分佈，並探討以不同曝光劑量與聚焦位置進行曝光的影響。
本研究的第二部分是基於無光罩微影與跳躍式斜掃描演算法製作週期性與隨機形式的微透鏡陣列。將目標結構深度經由光阻反應曲線轉換為曝光劑量，利用反捲積取得曝光點群密度分佈，並由逆轉換取樣與Fibonacci網格的機率密度撒點方法計算出曝光點群座標分佈。透過無光罩微影製程製作出兩種微透鏡陣列，量測穿過微透鏡陣列的雷射光束強度分佈，探討兩種隨機形式的微透鏡陣列破壞透鏡陣列的週期性對干涉光斑的影響。

This study established a simulation method for photoresist (PR) exposure based on the Finite Difference Beam Propagation Methods (FD-BPM). The development rate of the photoresist is determined by the concentration of photoactive compound (PAC). During the ultraviolet (UV) exposure process, the PAC concentration in the photoresist will change with the absorbed exposure dose, simultaneously alter the photoresist's absorption rate and refractive index. In this study, the photoresist exposure parameters and development rate model were obtained by measurements and fitting. According to the distribution of absorption rate and refractive index in the photoresist that change with exposure, the propagation of UV light in the photoresist layer was calculated by FD-BPM, thereby obtained the internal PAC concentration distribution after exposure, which was then converted to the development rate distribution according to the development rate model. The purpose of this study was to achieve the more accurate exposure dose distribution during the thick photoresist exposure process and to analyze the effects of different exposure doses and focus positions.
The second part of this study is the fabrication of periodic and random microlens arrays, based on maskless digital lithography and obliquely scanning and step strobe lighting algorithm. The target structure depth was converted into exposure dose through the photoresist characteristic curves. By deconvolution calculation, the exposure point density distribution was determined, and the coordinates of the exposure points were calculated using the probability density point distribution method based on inverse transformation sampling and Fibonacci grid. Two types of microlens arrays were fabricated through the maskless lithography process. The intensity distribution of the laser beam passing through the microlens arrays was measured to investigate the impact of the interference pattern from destroyed the periodicity of the microlens array.

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