本研究主要是利用低電阻與低成本之ITO玻璃基板取代價格昂貴之金薄膜來沉積熱電薄膜，以電化學沉積法將Bi2Te3薄膜沉積於ITO玻璃基板上，並探討沉積時不同的Bi3+濃度及電流密度對所形成的薄膜之熱電特性的影響。製備完成的碲化鉍薄膜，以XRD來鑑定其結晶結構、以SEM觀察其微結構、以XPS分析其表面之鍵結型態與成分分析，並且作其厚度量測與電性分析。
本研究的結果顯示，沉積時電流密度增加會導致Bi2Te3薄膜中碲(Te)的含量降低，並使沉積之Bi2Te3薄膜以(110)平面為優選方向，且其表面形貌將會由片狀結構轉成針狀或團聚成針狀結構，同時提升其熱電性質。在Bi3+濃度為0.002M及電流密度為3.0 mA/cm2時，所沉積之薄膜具最佳的熱電性質，其Seebeck值為-26 μV/K且功率因子為13 μW/K。

In this study, ITO glass substrate, instead of gold thin film, was used for growing
thermoelectric films because of its low resistance property and low cost. Bi2Te3 film
was deposited on ITO glass substrate by electrochemical deposition. The
characteristics of Bi2Te3 thin films under different Bi3+ concentration and current
density during deposition were studied. The as-deposited thermoelectric thin film was
analyzed by using XRD, SEM and XPS to observe the crystal structure, microstructure,
surface bonding, and atomic composition. In addition, thickness measurement and
electrical characteristics analysis of Bi2Te3 thin film were executed.
The experiment result shows that as the depositing current density increases, the
content of tellurium (Te) in Bi2Te3 thin film decreases and the (110) plane becomes
the preferred orientation of Bi2Te3. Meanwhile, the morphology of Bi2Te3 thin film was
observed to change from sheet-like structure to needle-like or agglomerate needle-like
structure, with an enhancement of the thermoelectric property of Bi2Te3 thin film. The
higher thermoelectric property of Bi2Te3 thin film was observed at Bi3+ concentration
of 0.002M and the current density of 3.0 mA/cm2 during deposition process, with the
Seebeck coefficient and power factor being -26汹μV/K and 13 μW, respectively.

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