在本論文中，我們以有機金屬氣相磊晶成長系統成長三、五族氮化物化合物半導體，比較不同成長方法對其材料特性作分析，並製作紫外光波段之光檢測器。在材料分析上，首先以原子力顯微鏡、高解析度X射線繞射儀、光激發螢光光譜儀及霍爾量測系統等量測設備分析磊晶成長材料之特性。在元件特性的改進上，目標是將氮化物系列材料，應用於紫外光光檢測器元件，並藉由改進電極的透光性、主動區的材料與結構設計、多層緩衝層及基版的圖案化等方式，改進元件之特性。
在透明電極的部分，首先使用熱蒸著機系統，利用熱蒸著的方式，蒸鍍鎳/金金屬薄膜，在光激發化學氣相沈積系統，在氧氣的環境中經過適度的回火，提升金屬電極的透明度，並同時增加其金半接面之蕭特基位障高度，達到增加光子入射量，並降低元件暗電流的特性。
在主動區的結構方面，首先利用多重量子井的結構，製作發光二極體與光檢測器雙功能之元件。在順向偏壓下，元件特性為藍光發光二極體，但在逆偏操作下，元件則為光檢測器之特性。元件之發光二極體特性與光檢測器之特性，也同時被討論，並針對不同元件大小，所產生之不同元件特性加以探討。其次，利用有機金屬氣相磊晶系統，成長四元材料氮化鋁銦鎵(AlInGaN)，針對在不同磊晶成長的溫度下，其材料組成與材料特性加以分析，利用其晶格匹配度較佳的特性，得到較佳的材料品質。並將其應用於紫外光光檢測器上，其元件之光檢測波段，可達280nm，即成功地將波長移動到UV-B的波段。
在多重緩衝層的研究方面，首先我們先利用低溫成長之氮化矽/氮化鎵，作為緩衝層，製作高品質、低缺陷之氮化鎵磊晶層，並將其應用至紫外光光檢測器上。低缺陷密度之氮化鎵磊晶層可降低元件之漏電流路徑，進而降低元件之暗電流。再者低缺陷密度之氮化鎵磊晶層，亦可抑制元件內部增益的效應，有效地使元件操作在更高的電壓下，同時，高品質氮化鎵磊晶材料亦有助於元件對於雜訊的抵抗，使光檢測器有較低之雜訊等效功率，進而提升檢測器之檢測率。其次，我們亦利用低溫成長之氮化鎂/氮化鎵多重緩衝層來製作高品質之氮化鎵磊晶層，低溫成長之氮化鎂/氮化鎵多重緩衝層，可降低磊晶之成核點，增加橫向磊晶成長的部分，進而降低缺陷密度，提升氮化鎵材料之磊晶品質。除此之外，利用多對之氮化鎂/氮化鎵多重緩衝層，可進一步提高氮化鎵材料之磊晶品質。將其應用於光檢測器元件上，可大幅降低元件漏電流路徑、提高金半接面之蕭特機位障高度，在光響應部分，利用多對之氮化鎂/氮化鎵多重緩衝層，亦可抑制元件照光後之內部增益，使元件不易受電壓影響，進而操作在更電壓上，在雜訊方面，此結構亦可增加元件抗雜訊之能力，降低其雜訊等效功率，增加其檢測率。
在基版方面，首先我們先利用圖案化基版的方式，在基版上製作圖案，利用磊晶的方式調整使其橫向磊晶的部分具有較低之缺陷密度，以得到高品質之氮化鎵磊晶層。在材料分析上，不論由其蝕刻凹陷密度、X射線繞射之峰值之半高寬、光激發螢光光譜以及霍爾量測之電子移動率，皆可證明其磊晶品質獲得改善。將其運用在元件上，亦可提升其金半接面之蕭特基位障高度，增加元件光響應對電壓的抵抗能力，以及在雜訊上能力的提升，進而提升檢測率。最後我們利用黃光微影的技術，在基版上製作凹槽，利用兩次橫向成長，以期得到高品質之氮化鎵磊晶材料，由掃瞄式電子顯微鏡、穿透式電子顯微鏡以及陰極發光光譜分析結果，證明此一方法確實降低氮化鎵磊晶材料之缺陷密度。

In this dissertation, the III-V nitride-based compound semiconductors had grown by metal organic vapor phase epitaxy (MOCVD). The different way to grow the high quality GaN epitaxial layer was carried out and then applied in UV photo-detection. In the material analysis, the atomic force microscopy (AFM), high resolution X-ray diffraction (HRXRD), photoluminescence (PL) and Hall measurement were employed to confirm the epitaxial quality. As the improvement of device performance, the utilizing of GaN-based material to the UV detection was the main goal. It could be achieved by using transparent metal contact, the new material and structure in active layer, multiple buffer layers and patterned sapphire substrate.
In the part of the transparent contact layer, the Ni/Au metal layer was deposited by thermal evaporator and then annealed in oxygen by photo-CVD system. It would not only increase the transparent of the metal contact layer but also improve the Schottky barrier height between the metal and semiconductor. In the other word, it would result in a more incident photon and lower dark current for the device.
In the active region, first, the light emitting diode and photodetector double function device was fabricated by using multiple quantum well structure. Under forward bias, the device exhibited the properties of typical blue light emitting diode. Under the reverse bias, the device showed the photodetector properties. The characteristics of light emitting diode and photodetector were both discussed. The area and size of devices were also studied in light emitting diode and photodetector. Moreover, the quaternary AlInGaN was developed by using MOCVD system. The as-grown epitaxial quality and composition at different growth temperature were also analyzed. The higher quality of material would be obtained with the improvement of lattice mismatch between the AlInGaN and GaN layer. Then it would be applied into the photodetector and the 280nm cut-off region was fitted in the UV-B region.
The multiple buffer layers were also employed in this dissertation. The low temperature growth SiN/GaN buffer layer was introduced to obtain a high quality and low threading dislocation density GaN epitaxial film. And then it would be applied in the UV light detection. The low threading dislocation density and high quality GaN film could reduce the path of leakage current and diminished the dark current of fabricated photodetector. Moreover, the low threading dislocation density GaN film was discovered to suppress the internal gain of device and suggested to high power operation. At the same time, the high quality epitaxial film could also be helpful to the resistance of noise. It can decrease the noise equivalent power and increase the detectivity of the photodetector. Otherwise, the low temperature MgN/GaN multiple buffer layer were also utilized to manufacture high quality GaN epitaxial layer. The low temperature growth MgN/GaN multiple buffer layers could reduce the nuclei sites of the sapphire substrate and resulted in the enhancement of lateral growth. As well known, the lateral growth would decrease the threading dislocation density and increase the epitaxial quality of the GaN thin film upon buffer layer. As applied to the photodetector, it could drop the path of leakage current of the device and increase the Schottky barrier height. As to the response, the multi-pair MgN/GaN buffer layer also could suppress the internal gain under illumination. In the other word, it would be independent on the voltage applied in the device and indicate that it would potentially use in high power application. This structure also improved the capability of noise. The noise equivalent power could be reduced and the detectivity would be promoted.
The patterned sapphire substrate was also employed. First, the patterned substrate was fabricated. Then the low threading dislocation density GaN epitaxial film could be finished with adjusting the lateral growth when it grew. The enhan cement of epitaxial quality would be proved by material analysis such as etching pits density, FWHM of X-ray, PL spectrum, and electron mobility by Hall measurement. When it applied to the photodetector, it could increase the Schottky barrier height between the metal contact and semiconductor, enhance the property of voltage resistance of device, and promote the resistance capability of noise.
The last part of this dissertation, we proposed a novel selective growth technique. The patterned was finished by standard lithography technique. With our design, the growth of GaN would have twice lateral growth and obtain a very high quality GaN thin film. Owing to the scan electron microscopy (SEM), tunnel electron microscopy (TEM) and cathode luminescence (CL) analysis, it could be prove that this way would be work.

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