在先進的微影技術中，提高圖形保真度是一項關鍵技術。在本研究中，在近場光學條件下設計與製造了金屬奈米結構光罩，透過在圖形邊緣設計次波長下解析度的輔助特徵可以促進圖形保真度的提高，並應用於近場電漿子微影製程。由於入射光在金屬奈米結構上會產生表面電漿，根據近場光學的理論，其原理即當光與金屬表面相互作用時，表面電漿(Surface Plasmon, SP)會拘束在金屬與介電質表面傳遞，產生表面電漿共振，使得光場在表面附近得到增強。這種增強效應可以用來改變光的傳播特性，進而影響圖案的形狀。
因此，本研究利用兩種方式來研究利用表面電漿來增強電漿子微影裡圖案的解析度。第一種方式是利用一維和二維的表面溝槽做為一種干涉光，來增加狹縫圖形和圓環圖形的光學對比度，進而改善其曝光圖形的品質，如線邊緣粗糙度(line edge roughness)和表面深度。第二種方式則是透過迭代運算整合有限時域差分法來設計光罩幾何形狀，提出了一種非傳統的光學鄰近修正(Optical Proximity Correction, OPC)方法，即探討表面電漿及光學鄰近修正概念整合下，以提高金屬奈米結構在近場區域中的圖形保真度(patterning fidelity)。而在實驗方面，將光阻旋塗在所設計的金屬奈米結構上，利用自架的曝光系統，進行光阻圖案與模擬之光學影像進行驗證。
本論文中使用了原子力顯微鏡測量了光阻上的圖形形狀，結果顯示，透過設計的結構曝光出的圖形改善了圖形品質，例如線邊緣粗糙度、角落保真度和圖案光阻深度，進一步證明了所提出的方法的可行性，且這種方法可以應用於更複雜的任意圖案中，並為奈米器件提供良好的圖形保真度。

Improvement of patterning fidelity is a crucial technology in the advanced lithography. The edge placement and sub-resolution assist features on the mask can facilitate the improvement of patterning fidelity for the better process window. In this study, the metallic nanostructures were designed and fabricated as the photomask for the near-field lithography. The iteration algorithms were adopted to design the mask geometry for the enhancement of pattering fidelity. The unconventional optical proximity correction were proposed, which consider the surface plasmon behaviors. The metallic nanostructures of placement was also investigated the increment of optical contrast in near-field region. The optical image with better patterning fidelity were also obtained by finite-difference time-domain method. The enhancement of patterning fidelity were also demonstrated on the experiment, and the corresponding optical image was printed on the photoresist. Atomic force microscopy was used to measure the pattern shape on the photoresist. The results showed that the exposed pattern by the designed structure improved patterning quality such as line edge roughness, corner fidelity, and depth of patterned photoresist. This method can be implemented for more complex arbitrary patterns in many types of research and provide good pattern fidelity for nanodevices.

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