由於近年對綠色能源的重視，擷取外部能源並用來驅動微電子元件的技術受到關注與研究，其中摩擦起電因為其高輸出、製成簡易等優點，以及其對機械能的高轉換效率，使得擦電元件在能源技術中具有競爭力。本研究利用自組裝之傾斜角濺鍍(oblique angle deposition)裝置，製備傾斜結構的氧化鋅薄膜，並將之應用於摩擦起電奈米發電機(triboelectric nanogenerator, TENG)。
本實驗可分為兩部分，第一部分是透過濺鍍技術，製備傾斜排列的氧化鋅薄膜，並對材料的物理性質進行量測。第二部分是將該結構應用於摩擦起電奈米發電機，並考量到元件的實際應用，將矽基板換成具可撓性的PET基板，對元件的擦電輸出進行量測，與未處理的氧化鋅比較，並對輸出差異的機制，提供系統性的解釋。
本研究成功透過濺鍍技術，在無其他後續製程與前處理的條件下，完成傾斜氧化鋅的成長。當入射角設為45度時，傾斜角度約為18度，且該傾斜角度不會隨著入射角上升而增加。XRD及TEM均顯示傾斜氧化鋅具有(0002)優選取向，且從繞射圖譜可觀察到(0002)呈現圓弧狀之繞射點分布。而傾斜氧化鋅具有略為較高的功函數。
以傾斜氧化鋅為材料的TENG，相較於未處理之氧化鋅，在擦電輸出上有明顯的增益現象，其電壓、電流及轉移電荷量呈現3.3、8.6、10.1倍的提升。提升的原因為功函數的增加，使傾斜氧化鋅與PDMS在擦電序列表有更大的距離，因此能誘導更多擦電電荷，因此提高TENG輸出訊號，此為第一個觀察到利用傾斜角提高TENG輸出的研究。

In our work, oblique angle deposition (OAD) technique was deployed to synthesize inclined ZnO thin film. Obliquely aligned ZnO thin film was successfully grown in one step with tilting angle around 18⁰ under incident angle of 45⁰. The characterizations by XRD and TEM revealed that ZnO grew along (0002) preferred orientation.
Our results showed that TENG based on inclined ZnO thin film produced output voltage of 40.4 (V), short-circuit current of 0.26 (μA), and transferred charge quantity of 49.9 (nC), which were 3.28, 8.67, 10.12 times higher than that of the untreated ZnO thin film. The factor causing the enhanced output is the increase in work function of inclined ZnO. The increased work function led to a larger distance from PDMS in triboelectric series, thus improving the transferred charge quantity and the corresponding output performance.

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