矽基太陽能電池為目前主要商業化太陽能電池，為了探討製程變數對於矽基太陽能電池效率的影響，本研究首先針對擴散摻雜的製程進行最佳化，所得到最佳化擴散製程條件為850℃下持溫50分鐘，而其平均光電轉換效率為9.58%，最高效率可達11.09%。固定摻雜製程後，我們就旋塗擴散源及表面結構對於太陽能電池效率的影響作探討。在擴散源方面，擴散源A比起B、C、D具有較高的平均光電轉換效率，最高光電轉換效率達11.09%；在表面結構方面，使用反應離子蝕刻製備出黑矽太陽能電池，平均表面反射比於波長200~1000nm之間可低於2%，黑矽結構搭配擴散源A的平均光電轉換效率為6.61%，最高效率可達10.01%。

The silicon based solar cell is currently the primary commercial product in solar cell market. In order to investigate the effect of processing variables on the efficiency of silicon solar cells, we first optimized the doping process. The optimal doping condition is to maintain at 850℃ for 50 minutes.The average photo-electron conversion efficiency obtained is 9.58%, with the maximum efficiency up to 11.09%. Under this doping condition, the effect of the diffusion source and the surface texturing were studied.The higher average photo-electron conversion efficiency was achieved when use the diffusion source A with the maximum efficiency 11.09%. As to the surface texturing, the black silicon generated by reactive ion etching provides great absorbance of the sun light and the average surface reflectance is less than 2%. The photo-electron conversion efficiency is 6.61% with the highest efficiency up to 10% when using the diffusion A.

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