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研究生： 張孟邦
Chang, Meng-Pang
論文名稱： 熱碳還原法在ZnO薄膜上生長ZnGa2O4奈米線
Growth of ZnGa2O4 nanowires on a ZnO film by carbothermal reduction
指導教授： 林文台
Lin, Wen-Tai
學位類別： 碩士
Master
系所名稱： 工學院 - 材料科學及工程學系
Department of Materials Science and Engineering
論文出版年： 2010
畢業學年度： 98
語文別： 中文
論文頁數： 91
中文關鍵詞： ZnGa2O4奈米線 、ZnO薄膜 、熱碳還原法
外文關鍵詞： ZnGa2O4 nanowires, ZnO film, carbothermal reduction
相關次數： 點閱：65  下載：1 
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    • 利用熱碳還原法經由還原Ga2O3粉末可以在ZnO覆蓋的Si基板上生長ZnGa2O4奈米線，當Ga2O3粉末的重量控制在0.3-0.4克在溫度550-650℃和ZnO薄膜厚度為0.9μm的條件下可生長出大量且純的ZnGa2O4奈米線。而較薄的ZnO薄膜、較多Ga2O3粉末和把基板放置較高溫將會生長Ga2O3奈米帶。ZnGa2O4奈米線的生長機制是依循VS的生長機制。而經由光激發光譜分析(Photoluminescence,PL)的量測可發現ZnGa2O4奈米線的發光峰值約在460-480nm之間。

    The growth of ZnGa2O4 nanowires (NWs) on ZnO-coated Si substrates by carbothermal reduction of Ga2O3 powder as a function of the thickness of ZnO film and the weight of Ga2O3 powder was studied. With the weight of Ga2O3 powder held at 0.3-0.4 g, abundant and pure ZnGa2O4 NWs could grow at 550-650℃ on the 0.9 μm-thick ZnO film. Thinner ZnO film, more Ga2O3 powder, and higher substrate temperature favored the growth of Ga2O3 nanobelts. The growth of ZnGa2O4 NWs followed the vapor-solid process. The photolumescence spectra of ZnGa2O4 NWs showed the emission peaks around 460-480 nm.

    目錄 中文摘要 I Abstract II 誌謝 III 目錄 IV 圖目錄 VII 第一章 奈米材料簡介 1 1.1 前言 1 1.2 奈米表面效應 2 1.3 量子侷限效應 4 1.4 量子穿遂效應 5 1.5 一維奈米材料 5 1.6 一維奈米材料製備技術 7 1.6.1 熱蒸鍍法(thermal evaporation) 7 1.6.2 化學氣相沉積法(chemical vapor deposition) 8 1.6.3 熱碳還原法(carbothermal reduction) 10 1.6.4 水熱法(Solvothermal) 11 1.6.6 雷射蒸鍍法(laser ablation) 11 1.6.5 模板輔助法(template-assisted) 12 1.6.7 溶膠-凝膠法(sol-gel) 13 1.7 一維奈米線生長機制 14 1.7.1 Vapor-Liquid-Solid(VLS) 15 1.7.2 Vapor-Solid(VS) 16 1.7.3 Vapor-Solid-Solid(VSS) 17 1.7.4 Oxide-Assisted Growth(OAG) 18 1.7.5 Solution-Liquid-Solid(SLS、SFLS、SFSS) 19 第二章 文獻回顧 22 2.1 ZnGa2O4材料的應用 22 2.2 ZnGa2O4尖晶石(spinel)的結構 25 2.3 ZnGa2O4螢光粉體發光機制探討 26 2.4 ZnGa2O4奈米線的發展 29 2.5 研究動機 31 2.6 儀器原理 32 2.6.1 掃瞄式電子顯微鏡(Scanning Electron Microscop，SEM) 32 2.6.2 低掠角X光繞射儀(Grazing Incidence X-ray Diffractometer，GID) 33 2.6.3 穿透式電子顯微鏡(Transmission Electron Microscope，TEM) 35 2.6.4 X光能量散佈分析儀(Energy Dispersive X-ray Spectrometer，EDS) 35 2.6.5 光激發光譜分析(Photoluminescence，PL) 36 2.6.6 陰極發光分析(Cathodoluminescence，CL) 38 2.6.7 紫外光可見光(UV-vis)光譜儀 40 第三章 實驗步驟與方法 42 3.1 實驗設備及流程 42 3.1.1 矽基板的裁製 42 3.1.2 基板清洗 42 3.1.3 ZnO膠體溶液的配製 43 3.1.4 ZnO薄膜基板的製備 43 3.1.5 ZnGa2O4奈米線試片製備 44 3.2 TEM試片製備 45 3.2.1 TEM試片製備 45 3.3 實驗分析 46 3.3.1 掃瞄式電子顯微鏡分析 46 3.3.2 低掠角X光繞射分析 46 3.3.3 穿透式電子顯微鏡分析 47 3.3.4 光激發光譜(PL)量測 47 3.3.5 陰極發光光譜(CL)量測 47 3.3.6 紫外光可見光(UV-vis)光譜儀 47 第四章 結果與討論 49 4.1 ZnGa2O4奈米線的生長 49 4.1.1 ZnO薄膜厚度對ZnGa2O4奈米線生長之影響 49 4.1.2 Ga2O3粉末重量對ZnGa2O4奈米線生長之影響 50 4.1.3 ZnGa2O4奈米線的微結構 51 4.1.4 ZnGa2O4奈米線生長機制 52 4.2 ZnGa2O4奈米線的光學性質分析 53 4.2.1 ZnGa2O4奈米線光激發光譜(PL)和陰極發光(CL)光譜 53 4.2.2 ZnGa2O4奈米線之紫外/可見光光譜 (UV-vis) 54 第五章 結語 56 參考文獻 57 附錄 90

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