在本論文中，我們致力於研究異相氧化法於磷化銦鎵材料上的特性表現。相較於其他氧化系統，液相氧化法系統不需外加其他能量輔助，僅需要使用酸鹼值偵測計(pH Meter)以及溫度調節器(恆溫槽)保持操作在攝氏30~70℃環境下便能成長均勻氧化薄膜。
在元件應用方面，我們成功應用液相氧化法於磷化銦鎵/砷化銦假晶高速電子移動率場效電晶體 (pseudomorphic high electron mobility transistor, pHEMT)形成金氧半高速電子移動率場效電晶體結構，元件閘極長度及寬度為1微米×100微米，和傳統高速電子移動率場效電晶體相比皆具有完全夾止之特性，傳統高速電子移動率場效電晶體結構在最大閘極0V偏壓下最大汲極電流309 mA/mm，最大轉導122 mS/mm，turn-on電壓1.7V，逆向崩潰電壓為-6.1 V；金氧半高速電子移動率場效電晶體在最大閘極2 V偏壓下最大汲極電流495 mA/mm，最大轉導150 mS/mm，turn-on電壓為4.5 V，逆向崩潰電壓為-22.7 V，此外金氧半結構閘極漏電流可以改善超過840倍。高頻特性方面，傳統高速電子移動率場效電晶體及金氧半高速電子移動率場效電晶體之截止頻率分別為9.3 GHz及7.1 GHz，最大震盪頻率分別為18.5 GHz及20 GHz。由結果可見，對於所研製的磷化銦鎵/砷化銦鎵金氧半高速電子移動率場效電晶體(InGaP/InGaAs MOS-pHEMTS)，turn-on電壓提升2.8 V、崩潰電壓提升16.1 V、閘極漏電流改善超過840倍、最大震盪頻率提升1.5 GHz及改善最小雜訊指數。

We have demonstrated that liquid phase oxidation (LPO) technique to grow native oxide films on InGaP material. The liquid phase oxidation system is simple, low cost and low temperature in comparison with the other oxidation systems. In addition, the InGaP/InGaAspseudomorphic metal–oxide- semiconductor (MOS pHEMTs) with a liquid phase oxidized InGaP as gate insulators have been fabricated. Both of the conventional pHMET and MOS-pHEMT with gate length and width of 1 μm × 100 μm exhibit complete pinch-off characteristics. For the conventional pHEMTs, the maximum drain current density is 309 mA/mm at maximum gate-to-source voltage of 0 V. The peak extrinsic transconductance is 122 mS/mm. The maximum turn-on voltage is 1.7 V. The breakdown voltage is -6.1 V. For the MOS-pHEMTs with gate oxide thickness of 6 nm, the maximum drain current density is 495 mA/mm at maximum gate-to-source voltage of 2 V. The peak extrinsic transconductance is 150 mS/mm. The maximum turn-on voltage is 4.5 V. The breakdown voltage is -22.7 V. In addition, the gate leakage current density can be significantly improved for about 840 fold in the MOS-pHEMTs structure in comparison with conventional pHEMTs.
Furthermore, the cutoff frequencies of conventional pHEMTs and MOS-pHEMTs are 9.3 GHz and 7.1 GHz; the maximum oscillation frequencies are 18.5 GHz and 20 GHz, respectively. As the results above, the InGaP /InGaAs MOS-pHEMTS have improved the turn-on voltage 2.8 V 、 breakdown voltage 16.1 V、gate leakage current more than 840 times、 maximum oscillation frequencies 1.5 GHz and the Noise Figure minimum.

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