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研究生：	李家文 Lee, Chia-Wen
論文名稱：	室溫下溶液製程氧化鎳及錳摻雜氧化鎳電阻式記憶體之研製 Investigation of RRAM fabricated at room temperature with Solution-Processed NiO and Mn-doped NiO Nanoparticles
指導教授：	蘇炎坤 Su, Yan-Kuin
學位類別：	碩士 Master
系所名稱：	電機資訊學院 - 微電子工程研究所 Institute of Microelectronics
論文出版年：	2020
畢業學年度：	108
語文別：	英文
論文頁數：	68
中文關鍵詞：	非揮發性電阻式記憶體、室溫、溶液製程、奈米粒子、氧化鎳、雜質摻雜、錳摻雜氧化鎳、金屬氧化物、氧空缺
外文關鍵詞：	non-volatile resistive random access memory, room temperature, solution process, nanoparticles, impurity doping, NiO, Mn:NiO, metal oxides, oxygen vacancy
相關次數：	點閱：144 下載：13
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本論文以室溫溶液製程製作氧化鎳及錳摻雜氧化鎳電阻式記憶體。以旋轉塗布的方法在在氧化銦錫/玻璃基板上沉積氧化鎳及錳摻雜氧化鎳奈米粒子懸浮液，並在室溫下乾燥，製造ITO/NiO or Mn:NiO/Al (金屬-絕緣層-金屬) 結構之電阻式記憶體。本論文與傳統溶液製程（溶膠凝膠法）相比，成功降低了製程溫度及簡化了製程步驟。電阻式記憶體具有讀寫速度快、結構簡單、單元面積小、密度高、低耗電、非揮發性等優點。
以純氧化鎳製作的電阻式記憶體元件可以正常開達220次並具有4.93*103的開關比。並且證實摻雜金屬錳能夠增加氧化鎳絕緣層的氧空缺濃度，幫助導電燈絲的形成，並且改善了元件的性能。以錳摻雜氧化鎳製作的電阻式記憶體元件可以正常開關大約641次並具有4.3*104的開關比。相較於其他溶液製程的元件，我們的元件具有更好的表現，尤其是元件耐久性及可靠度的改進。

In this thesis, NiO and Mn-doped NiO resistive random access memory (RRAM) are fabricated by solution process at room temperature. NiO and Mn-doped NiO nanoparticles suspension were deposited on ITO/glass substrates by spin coating method and dried at room temperature to fabricate ITO/NiO or Mn:NiO/Al (Metal-Insulator-Metal) RRAM structure. Compared with the traditional solution process (sol-gel method), this study successfully reduced the process temperature and simplified the process procedure. Resistive memory has the advantages of fast read and write speed, simple structure, small unit area, high density, low power consumption, and non-volatile.
A pure NiO-based RRAM device has the switching cycles of 220 times and an on/off ratio of 4.93*103. It was also confirmed that doping metal Mn can increase the concentration of the oxygen vacancy in the NiO film and help with the formation of conducting filaments, which improved the performance of devices. The RRAM devices with Mn-doped NiO showed the switching cycles of 641 times and an on/off ratio of 4.3*104. Compared with the devices made by other solution methods, our devices have better performance, especially in endurance and reliability.

摘要	I
Abstract	II
致謝	IV
Contents	V
List of Tables	VIII
Figure Captions	IX
Chapter 1:	Introduction	1
1-1	Introduction of Memory Devices	1
1-1-1	Volatile Memory	1
1-1-1-1	Dynamic Random Access Memory	1
1-1-1-2	Static Random Access Memory	1
1-1-2	Non-Volatile Memory	2
1-1-2-1	Flash Memory	2
1-1-2-2	Ferroelectric Random Access Memory	3
1-1-2-3	Phase Change Random Access Memory	4
1-1-2-4	Resistive Random Access Memory	5
1-2	Motivation	5
1-3	Organization of This Thesis	7
Chapter 2:	Literature Review	7
2-1	Resistive Switching Behavior	7
2-1-1	Unipolar Devices	7
2-1-2	Bipolar Devices	7
2-2	Resistive Switching Mechanisms	8
2-2-1	Filamentary Conducting Path	8
2-2-1-1	Thermochemical Mechanism	9
2-2-1-2	Electrochemical Metallization	9
2-2-1-3	Valence Change Mechanism	10
2-2-2	Interface-Type Path	11
2-3	Conduction Mechanisms	12
2-3-1	Electrode-Limited Conduction Mechanisms	13
2-3-1-1	Schottky emission	13
2-3-1-2	Fowler-Nordheim tunneling and direct tunneling	14
2-3-1-3	Thermionic-field Emission	15
2-3-2	Bulk-Limited Conduction Mechanisms	16
2-3-2-1	Poole-Frenkel emission	16
2-3-2-2	Hopping conduction	17
2-3-2-3	Ohmic conduction	18
2-3-2-4	Space-charge-limited conduction	19
2-3-2-5	Ionic conduction	20
Chapter 3:	Processing Procedure of RRAM	22
3-1	Materials	22
3-1-1	Metal Bottom Electrode: ITO	22
3-1-2	Insulator: NiO	22
3-1-3	Metal Top Electrode: Al	22
3-2	Preparation of NiO thin film and RRAM	23
3-2-1	Synthesis of NiO Nanoparticles Suspension	23
3-2-2	Synthesis of Mn:NiO Nanoparticles Suspension	23
3-2-3	Device fabrication	24
3-3	Experimental Equipment	25
3-3-1	Electrical Measurement	25
3-3-2	X-ray Diffraction	26
3-3-3	X-ray Photoelectron Spectroscopy	27
3-3-4	Scanning Electron Microscope	28
3-3-5	Atomic Force Microscope	28
Chapter 4:	Switching Memory Devices of ITO/NiO/Al	30
4-1	Motivation	30
4-2	Device Fabrication	31
4-3	Results and Discussion	32
4-3-1	(A) Devices with NiO deposited by two-step spin-coating method	32
4-3-1-1	I-V Characteristics	32
4-3-1-2	Endurance	33
4-3-1-3	Cumulative Probability	34
4-3-1-4	Comparison of devices with different spin rates	36
4-3-2	(B) Devices with NiO deposited by one-step spin-coating method	37
4-3-2-1	I-V Characteristic	37
4-3-2-2	Endurance	37
4-3-2-3	Cumulative Probability	38
4-3-3	Comparison of devices fabricated by (a) two-step and (b)one-step spin-coating method	39
4-3-3-1	SEM	39
4-3-3-2	AFM	39
4-3-4	XRD	40
4-3-5	XPS	41
4-3-6	Conduction Mechanisms	43
4-3-7	Resistive Switching Mechanisms	44
4-4	Summary	45
Chapter 5:	Switching Memory Devices of ITO/Mn:NiO/Al	46
5-1	Motivation	46
5-2	Device fabrication	48
5-3	Results and Discussion	49
5-3-1	XPS	49
5-3-2	I-V characteristics	50
5-3-3	Endurance	51
5-3-4	Cumulative probability	52
5-3-5	SEM	53
5-3-6	AFM	54
5-3-7	Conduction Mechanisms	55
5-4	Summary	58
Chapter 6:	Conclusions	60
Chapter 7:	Future Work	62
7-1	Fabrication of the devices with flexible substrates	62
7-2	Effect of light exposure on the RRAM devices	62
References	64
                                    

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