隨著能源轉換技術與智慧電子元件的快速發展，如何在低功耗條件下有效調控半導體中的載子行為，已成為材料科學與電子工程領域的重要研究課題。特別是結合機械能、光能與電能的多物理耦合機制，不僅為自供能系統提供新的設計方向，也為新型感測與運算架構開啟更多可能性。在此背景下，壓電材料所產生的極化電場，因其可由外加應變調控，成為控制半導體介面能帶與載子動力學的關鍵機制。本論文聚焦於壓電極化所誘發之內建電場，系統性探討其在半導體介面能帶調控與載子傳輸行為中的關鍵角色，並進一步應用於能源轉換與壓電閘極電子元件之設計。在光電化學水分解系統中，本研究以氧化鋅為壓電半導體光電極，藉由p型與n型ZnO所構成之同質接面奈米柱陣列之結構設計，成功引入具有方向性的內建電場，且在外加機械應變作用下，壓電極化電場可進一步調控半導體與電解液介面能障，顯著抑制光生載子之再結合率並提升載子分離效率。此外，透過引入多孔結構以增強局部應變集中效應，證實材料結構工程在壓電及光電耦合系統中的關鍵影響。本研究也將壓電調控概念延伸至固態電子元件，發展出高靈敏度之壓電閘極雙層薄膜電晶體。透過結合 ZnO 與多孔 PVDF-TrFE 壓電層，利用應變誘發之壓電電場作為主動閘極機制，在無外加閘極偏壓下即可實現對通道載子濃度的有效調控，展現出類似傳統金屬氧化物半導體場效電晶體在累積、空乏與反轉三種操作模式的切換行為，並呈現極高的應變靈敏度。綜合而言，本論文建立了一個以「壓電極化調控介面能帶與載子傳輸性質」為核心的統一框架，串聯壓電催化、壓電光電效應與壓電閘極電子學。研究結果不僅為高效率自供能能源轉換與感測元件提供明確的設計準則，也展現壓電電場作為多功能調控手段的高度潛力。未來可進一步將此概念拓展至離子傳輸系統，利用壓電電場實現離子運動調控，並應用於神經形態運算與離子式突觸元件，朝向整合感測、運算與能量採集之新型智慧電子系統發展。

With the development of energy conversion and intelligent electronic systems, low-power control of semiconductor electrical behavior has become critical. This study investigates how strain-induced piezoelectric polarization fields modulate interfacial band energetics and charge transport in semiconductor systems. In photoelectrochemical water-splitting systems, ZnO is employed as a piezoelectric semiconductor photoelectrode. By constructing p-type and n-type ZnO homojunction nanorod arrays with a porous structure, the resulting electric field and piezoelectric polarization is introduced to modulate the energy band of semiconductor, and promote photo-generated charge separation, thereby highlighting the critical role of structural engineering in piezoelectric-photonic coupling systems. In addition to energy conversion, the concept of piezoelectric modulation is extended to solid-state electronics through the development of bilayer thin-film transistors operated through piezoelectric gating with high strain sensitivity. By integrating ZnO with a porous PVDF-TrFE piezoelectric layer, strain-induced polarization fields are utilized as an active gating mechanism, enabling effective modulation of channel carrier density without an externally applied gate bias. The resulting piezo-gated transistors exhibit full operation-mode switching, as well as exceptionally high strain sensitivity, demonstrating piezoelectric polarization as a novel low-power gating strategy. Overall, this work establishes a framework centered on piezoelectric-polarization-controlled interfacial energetics and carrier dynamics, linking piezocatalysis, piezo-phototronic effects, and piezo-gated electronics. The findings provide design guidelines for self-powered energy conversion and sensing devices, and may be further extended to piezoelectric-controlled ion transport systems for neuromorphic and ionic synaptic applications.

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