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研究生：	劉金勳 Liu, Chin-Hsin
論文名稱：	接觸轉印與遮罩植入式微影技術製作超高頻表面聲波元件 Contact-Transfer and Mask Embedded Lithography for Fabrication of High Frequency Surface Acoustic Wave (SAW) Devices
指導教授：	李永春 Lee, Yung-Chun
學位類別：	碩士 Master
系所名稱：	工學院 - 機械工程學系 Department of Mechanical Engineering
論文出版年：	2007
畢業學年度：	95
語文別：	中文
論文頁數：	93
中文關鍵詞：	壓電材料、模態耦合理論、表面聲波元件、接觸轉印與遮罩植入式微影技術
外文關鍵詞：	Contact-Transfer and Mask-Embedded Lithography, surface acoustic wave, SAW devices, interdigital transducer
相關次數：	點閱：175 下載：5
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接觸轉印與遮罩植入式微影技術是一種新興的奈米轉印技術，與其他奈米轉印微影技術不同在於，此轉印技術不需經過曝光及加熱方式即可完成轉印，對於模仁及基板材質具有相當高的容忍度，塗佈於基板上之光阻亦不限制於必須是光敏性或熱塑性材料，更具有脫模簡單以及精確定義線寬等優點，是一項相當具有發展潛力的奈米轉印微影技術。
本文理論部份根據B.P. Abbott等人於1989年所發展出的模態耦合理論進行模擬分析，設計出週期2 μm、金屬線寬0.5 μm、且金屬比為0.5的交指叉電極與其構成的表面聲波濾波器，與週期3.2 μm、金屬線寬0.8 μm、且金屬比為0.5的交指叉電極與其構成的表面聲波共振器，之後在矽晶圓上製作表面聲波元件之凹模圖形結構當作轉印用模仁，並以接觸轉印與遮罩植入式微影技術，將矽模仁上的交指叉電極及焊點塊(Bonding Pad)同時且完全轉印至壓電材料128°Y-cut LiNbO3上，接著利用轉移材料層當做光阻蝕刻遮罩，以氧電漿對光阻進行去除，再配合其他微機電製程，成功的在128°Y-cut LiNbO3上製作出表面聲波元件，並經由電子顯微鏡(SEM)觀測其表面形貌及網路分析儀量測其電氣特性，證明此種奈米轉印微影技術能夠以更低廉的成本成功完成表面聲波元件。在比較模擬與實驗的結果後發現，表面聲波共振器所量測到的訊號與模擬結果較接近，而表面聲波濾波器所量測的訊號則誤差較大，且兩種元件量測到的中心頻率與模擬得到的中心頻率仍有一段差距。

A newly nanoimprint technique of Contact-Transfer and Mask Embedded Lithography (CMEL) is applied to fabricate the Surface Acoustic Wave (SAW) devices. The advantages of CMEL include: imprint without using energy to form the nanostructure; the life time of mold is more durable, flexibility in the combination of materials for mold and photoresist, and high resolution of imprint result.
The simulation is based on coupling-of-mode theory (COM theory) presented by B.P. Abbott in 1989. In the original of SAW filter design, it has interdigital transducer (IDT) structure with a period of 2 μm, metalization of 0.5. For the resonator, it has IDT structure with a period of 3.2 μm. In this experiment, the concave mold with the feature of SAW structure was transferred to 128° Y-cut LiNbO3 successfully by CMEL and MEMS fabrication. In the result, the frequency response of SAW devices were measured by microwave probe and network analyzer. Compare with the simulated and measurement results, it indicates that the SAW resonator has a better agreement than SAW filter.

摘要......................................................I
Abstract.................................................IV
致謝......................................................V
目錄.....................................................VI
表目錄....................................................X
圖目錄...................................................XI
符號說明.................................................XV
第一章 導論...............................................1
1-1 研究背景與目的	........................................1
1-2 表面聲波元件文獻回顧..................................4
1-3 奈米轉印技術介紹......................................6
1-3. 1 熱壓成形奈米轉印技術(HE-NIL).......................6
1-3. 2 紫外光硬化型奈米轉印技術(UV-NIL)...................8
1-3. 3 軟性奈米轉印微影技術(μCP).........................10
1-3. 4 雷射輔助式直接壓印技術(LADI)......................11
1-3. 5 紅外光雷射輔助式直接壓印技術(IR-LADI).............13
1-3. 6 接觸轉印與遮罩植入式微影技術(CMEL)................15
1-4 論文架構.............................................17
第二章 實驗參數設計......................................18
2-1 壓電效應.............................................18
2-1. 1 正壓電效應........................................19
2-1. 2 逆壓電效應........................................19
2-2 壓電基板的選擇	.......................................19
2-3 表面聲波濾波器原理...................................20
2-4 模態耦合理論參數定義.................................20
2-4. 1 波傳損失..........................................21
2-4. 2 反射係數..........................................21
2-4. 3 電性轉換係數......................................22
2-4. 4 金屬薄膜電阻......................................22
2-4. 5 單位長度電容......................................23
2-4. 6 表面波波速........................................23
2-5 金屬柵欄數目.........................................24
2-6 金屬厚度.............................................27
2-7 交指叉電極對數	.......................................28
2-8 交指叉電極交叉重疊長度...............................29
2-9 延遲距離.............................................30
第三章 實驗流程..........................................34
3-1 光罩設計.............................................34
3-2 元件製程介紹.........................................35
3-2. 1 模仁製作流程......................................35
3-2. 1. 1 微影製程	.......................................37
3-2. 1. 2 矽基板蝕刻.....................................38
3-2. 1. 3 去除光阻	.......................................40
3-2. 1. 4 模仁表面抗沾黏處理.............................40
3-2. 1. 5 金屬蒸鍍	.......................................42
3-2. 2 壓印基板準備......................................43
3-2. 2. 1 晶圓切割	.......................................43
3-2. 2. 2 塗佈光阻	.......................................44
3-2. 3 接觸轉印與遮罩植入式微影技術......................46
3-2. 3. 1 接觸轉印與遮罩植入式微影製程實驗架構...........46
3-2. 3. 2 氧電漿去除殘餘層...............................48
3-2. 3. 3 金屬蒸鍍	................................................49
3-2. 3. 4 光阻去除.......................................49
3-3 元件量測.......................................................50
3-3. 1 儀器架構..........................................50
3-3. 2 量測方法..........................................51
第四章 實驗結果與模擬分析................................53
4-1 壓印前矽模仁形貌.....................................53
4-2 壓印基板上之光阻厚度.................................56
4-3 接觸轉印與遮罩植入式微影製程壓印結果.................57
4-4 壓印後之模仁形貌.....................................59
4-5 舉離前之元件形貌.....................................61
4-6 完成元件之形貌	.......................................63
4-7 元件量測結果與模擬分析比較...........................66
第五章 結論與未來展望....................................70
5-1 結論.................................................70
5-2 未來展望.............................................71
參考文獻.................................................72
附錄 光罩設計規格........................................76
                                    

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